KS

Koji Shirai

KT Kabushiki Kaisha Toshiba: 23 patents #1,224 of 21,451Top 6%
NE Nec: 2 patents #5,510 of 14,502Top 40%
HK Henkel Ag & Co. Kgaa: 1 patents #1,145 of 2,331Top 50%
HZ Hitachi Zosen: 1 patents #216 of 531Top 45%
Overall (All Time): #145,248 of 4,157,543Top 4%
27
Patents All Time

Issued Patents All Time

Showing 1–25 of 27 patents

Patent #TitleCo-InventorsDate
11377549 Hot melt composition Shingo Tsuno, Masaaki Dobashi, Takahide Morishita 2022-07-05
9508459 Method to prevent stress corrosion cracking of storage canister and storage canister Akikazu Kitagawa, Akio Ohiwa, Keisuke Okada, Katsunori Kusunoki, Tomohiro Tanaka +3 more 2016-11-29
8890281 Semiconductor device Mariko Shimizu 2014-11-18
8779523 Semiconductor device Ken Inadumi, Tsuyoshi Hirayu, Toshihiro Sakamoto 2014-07-15
8624355 Semiconductor device and method for manufacturing the same 2014-01-07
8421153 Semiconductor device Kanako Komatsu, Jun Morioka, Keita Takahashi, Tsubasa Yamada, Mariko Shimizu 2013-04-16
8304827 Semiconductor device having on a substrate a diode formed by making use of a DMOS structure Yuki Nakamura, Hirofumi Nagano, Jun Morioka, Tsubasa Yamada, Kazuaki Yamaura +1 more 2012-11-06
7584011 Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product Kazumi Nishinohara, Mitsutoshi Nakamura, Kyoichi Suguro, Ichiro Taguchi 2009-09-01
7349750 Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product Kazumi Nishinohara, Mitsutoshi Nakamura, Kyoichi Suguro, Ichiro Taguchi 2008-03-25
7027810 Method of determining electric field state of mobile station also in view of electric field state of uplink 2006-04-11
6731958 Portable radio communication apparatus with improved power-saving function 2004-05-04
6417558 Semiconductor device having a reduced parasitic capacitance bonding pad structure 2002-07-09
6307224 Double diffused mosfet 2001-10-23
5677571 Semiconductor package having reinforced lead pins 1997-10-14
5422505 FET having gate insulating films whose thickness is different depending on portions 1995-06-06
5306938 Lateral MOSFET 1994-04-26
5202573 Dual anode MOS SCR with anti crosstalk collecting region 1993-04-13
5191401 MOS transistor with high breakdown voltage Ken Kawamura 1993-03-02
5122855 Semiconductor device with latch-up prevention structure 1992-06-16
5108944 Method of manufacturing a semiconductor device Ken Kawamura 1992-04-28
5087954 MOS-type integrated circuit 1992-02-11
5075754 Semiconductor device having improved withstanding voltage characteristics Ken Kawamura 1991-12-24
5059547 Method of manufacturing double diffused MOSFET with potential biases 1991-10-22
5008724 Semiconductor device Ken Kawamura 1991-04-16
4884116 Double diffused mosfet with potential biases 1989-11-28