KS

Kazuhiro Shimizu

KT Kabushiki Kaisha Toshiba: 59 patents #253 of 21,451Top 2%
Mitsubishi Electric: 33 patents #378 of 25,717Top 2%
SO Sony: 9 patents #4,874 of 25,231Top 20%
YA Yazaki: 5 patents #1,574 of 3,427Top 50%
YE Yokogawa Electric: 3 patents #261 of 1,441Top 20%
KA Kaneka: 2 patents #598 of 1,525Top 40%
TO Toyota: 1 patents #15,335 of 26,838Top 60%
NI Nissho: 1 patents #65 of 171Top 40%
MM Matsuura Machinery: 1 patents #28 of 59Top 50%
MC Mitsubishi Chemical: 1 patents #1,511 of 3,022Top 50%
AC Arai Seisakusho Co: 1 patents #1 of 39Top 3%
TK Terumo Kabushiki Kaisha: 1 patents #888 of 1,558Top 60%
TM Tessera Interconnect Materials: 1 patents #5 of 11Top 50%
📍 Osaka, MI: #5 of 20 inventorsTop 25%
Overall (All Time): #10,681 of 4,157,543Top 1%
116
Patents All Time

Issued Patents All Time

Showing 101–116 of 116 patents

Patent #TitleCo-InventorsDate
6218712 Semiconductor device and method of manufacturing same 2001-04-17
6191975 Non-volatile NAND type semiconductor memory device with stacked gate memory cells and a stacked gate select transistor Shinji Satoh, Seiichi Aritome 2001-02-20
6160297 Semiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit lines Hiroshi Watanabe, Yuji Takeuchi, Seiichi Aritome, Toshiharu Watanabe 2000-12-12
6157056 Semiconductor memory device having a plurality of memory cell transistors arranged to constitute memory cell arrays Yuji Takeuchi, Toshiharu Watanabe, Seiichi Aritome, Hiroshi Watanabe 2000-12-05
6115287 Nonvolatile semiconductor memory device using SOI Seiichi Aritome 2000-09-05
6060740 Non-volatile semiconductor memory device and method for manufacturing the same Seiichi Aritome, Kauhito Narita 2000-05-09
6057580 Semiconductor memory device having shallow trench isolation structure Hiroshi Watanabe, Yuji Takeuchi, Seiichi Aritome 2000-05-02
6049482 Non-volatile semiconductor memory device Seiichi Aritome 2000-04-11
5946230 Nonvolatile semiconductor memory device having the reliability of gate insulating film of memory cells enhanced and method for manufacturing the same Seiichi Aritome, Shinji Satoh 1999-08-31
5894156 Semiconductor device having a high breakdown voltage isolation region Tomohide Terashima 1999-04-13
5889310 Semiconductor device with high breakdown voltage island region Tomohide Terashima 1999-03-30
5889304 Nonvolatile semiconductor memory device Hiroshi Watanabe, Yuji Takeuchi, Seiichi Aritome 1999-03-30
5874767 Semiconductor device including a lateral power device Tomohide Terashima 1999-02-23
5703515 Timing generator for testing IC Akira Toyama 1997-12-30
5574254 Water-proof sealing structure for an electric junction box Fumimasa Mori, Masato Odake, Fumio Kumagai 1996-11-12
5505711 Indwelling injector needle assembly having wings Kuranosuke Arakawa 1996-04-09