JN

Jun Nara

KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
NS National Institute For Materials Science: 1 patents #361 of 901Top 45%
📍 Tsukuba, JP: #1,768 of 2,818 inventorsTop 65%
Overall (All Time): #2,839,177 of 4,157,543Top 70%
1
Patents All Time

Issued Patents All Time

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
10186596 Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of suppressing deterioration of carrier mobility and variation in threshold voltage Tatsuo Shimizu, Takahisa Ohno, Tomoaki Kaneko, Takahiro Yamasaki, Nobuo Tajima 2019-01-22