HS

Hideyuki Sugiyama

KT Kabushiki Kaisha Toshiba: 82 patents #122 of 21,451Top 1%
EC Eliiy Power Co.: 6 patents #3 of 27Top 15%
Kioxia: 6 patents #212 of 1,813Top 15%
Honda Motor Co.: 2 patents #8,527 of 21,052Top 45%
Mazda Motor: 1 patents #2,563 of 4,755Top 55%
📍 Ota, JP: #7 of 330 inventorsTop 3%
Overall (All Time): #15,921 of 4,157,543Top 1%
95
Patents All Time

Issued Patents All Time

Showing 51–75 of 95 patents

Patent #TitleCo-InventorsDate
8611143 Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array Masato Oda, Shinobu Fujita, Tetsufumi Tanamoto, Mizue Ishikawa, Takao Marukame +2 more 2013-12-17
8576601 Content addressable memory Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Yoshiaki Saito, Atsuhiro Kinoshita +1 more 2013-11-05
8487359 Spin MOSFET and reconfigurable logic circuit using the spin MOSFET Yoshiaki Saito, Tomoaki Inokuchi, Mizue Ishikawa, Takao Marukame 2013-07-16
8405443 Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit Tetsufumi Tanamoto, Takao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito 2013-03-26
8385114 Nonvolatile memory circuit using spin MOS transistors Tetsufumi Tanamoto, Takao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito 2013-02-26
8373437 Look-up table circuits and field programmable gate array Tetsufumi Tanamoto, Takao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito 2013-02-12
8357962 Spin transistor and method of manufacturing the same Takao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito 2013-01-22
8335059 Tunneling magnetoresistive effect element and spin MOS field-effect Mizue Ishikawa, Yoshiaki Saito, Tomoaki Inokuchi 2012-12-18
8330196 Semiconductor device and method of manufacturing the same Takao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito 2012-12-11
8310862 Magnetoresistive effect element and magnetic memory Yoshiaki Saito, Tomoaki Inokuchi 2012-11-13
8294489 Programmable logic circuit Tetsufumi Tanamoto, Kazutaka Ikegami, Yoshiaki Saito 2012-10-23
8264024 Spin transistor, programmable logic circuit, and magnetic memory Yoshiaki Saito 2012-09-11
8243400 Tunneling magnetoresistive effect element and spin MOS field-effect transistor Mizue Ishikawa, Yoshiaki Saito, Tomoaki Inokuchi 2012-08-14
8217438 Spin memory and spin FET Tomoaki Inokuchi, Yoshiaki Saito 2012-07-10
8154916 Nonvolatile memory circuit using spin MOS transistors Tetsufumi Tanamoto, Takao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito 2012-04-10
8139403 Spin memory and spin transistor Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Hisanori Aikawa, Masahiko Nakayama +3 more 2012-03-20
8134193 Magneto-resistance effect element and magnetic memory Tomoaki Inokuchi, Yoshiaki Saito 2012-03-13
8111087 Semiconductor integrated circuit Tomoaki Inokuchi, Mizue Ishikawa, Yoshiaki Saito 2012-02-07
8026561 Spin MOSFET and reconfigurable logic circuit Yoshiaki Saito, Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa 2011-09-27
8004029 Spin transistor, programmable logic circuit, and magnetic memory Yoshiaki Saito 2011-08-23
7977719 Magneto-resistance effect element and magnetic memory Tomoaki Inokuchi, Yoshiaki Saito 2011-07-12
7973351 Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same Takao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito 2011-07-05
7956395 Spin transistor and magnetic memory Tomoaki Inokuchi, Mizue Ishikawa, Yoshiaki Saito 2011-06-07
7943974 Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy Mizue Ishikawa, Yoshiaki Saito, Tomoaki Inokuchi 2011-05-17
7812383 Spin memory and spin FET Tomoaki Inokuchi, Yoshiaki Saito 2010-10-12