Issued Patents All Time
Showing 101–119 of 119 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6133607 | Semiconductor device | Akio Nakagawa | 2000-10-17 |
| 6133617 | High breakdown voltage semiconductor device | Keizo Hirayama, Fumito Suzuki, Akio Nakagawa | 2000-10-17 |
| 6069396 | High breakdown voltage semiconductor device | — | 2000-05-30 |
| 6064086 | Semiconductor device having lateral IGBT | Akio Nakagawa, Tomoko Matsudai, Norio Yasuhara | 2000-05-16 |
| 5985708 | Method of manufacturing vertical power device | Akio Nakagawa, Naoharu Sugiyama, Tomoko Matsudai, Norio Yasuhara, Atsusi Kurobe +2 more | 1999-11-16 |
| 5981983 | High voltage semiconductor device | Yoshihiro Yamaguchi | 1999-11-09 |
| 5982015 | High breakdown voltage semiconductor device | Keizo Hirayama, Fumito Suzuki, Akio Nakagawa | 1999-11-09 |
| 5920087 | Lateral IGBT | Akio Nakagawa, Tomoko Matsudai | 1999-07-06 |
| 5894164 | High voltage semiconductor device | Akio Nakagawa, Norio Yasuhara, Yoshinori Terazaki | 1999-04-13 |
| 5777371 | High-breakdown-voltage semiconductor device | Yusuke Kawaguchi, Yoshihiro Yamaguchi | 1998-07-07 |
| 5751022 | Thyristor | Norio Yasuhara, Akio Nakagawa, Tomoko Matsudai | 1998-05-12 |
| 5731603 | Lateral IGBT | Akio Nakagawa, Tomoko Matsudai | 1998-03-24 |
| 5679973 | Lateral hall element | Hiroshi Mochizuki, Kanae Fujii | 1997-10-21 |
| 5640040 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura | 1997-06-17 |
| 5635736 | MOS gate type semiconductor device | Yoshihiro Yamaguchi | 1997-06-03 |
| 5592014 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura | 1997-01-07 |
| 5548150 | Field effect transistor | Ichiro Omura, Akio Nakagawa, Tadashi Sakai, Masayuki Sekimura | 1996-08-20 |
| 5548151 | Hall element for detecting a magnetic field perpendicular to a substrate | Hiroshi Mochizuki, Ryoji Maruyama, Kanae Fujii | 1996-08-20 |
| 5438220 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura | 1995-08-01 |