Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7645619 | Magnetic random access memory device and method of forming the same | Se-Chung Oh, Jang-Eun Lee, Jun-Soo Bae, Hyun-Jo Kim, Kyung-Tae Nam | 2010-01-12 |
| 7582890 | Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof | Jang-Eun Lee, Se-Chung Oh, Jun-Soo Bae, Hyun-Jo Kim, Kyung-Tae Nam | 2009-09-01 |
| 7378698 | Magnetic tunnel junction and memory device including the same | Jang-Eun Lee, Hyun-Jo Kim, Jun-Soo Bae, In-Gyu Baek, Se-Chung Oh | 2008-05-27 |
| 7372090 | Magnetic random access memory device and method of forming the same | Se-Chung Oh, Jang-Eun Lee, Jun-Soo Bae, Hyun-Jo Kim, Kyung-Tae Nam | 2008-05-13 |
| 7352021 | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier | Jun-Soo Bae, Jang-Eun Lee, Hyun-Jo Kim, In-Gyu Baek | 2008-04-01 |
| 7351594 | Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier | Jun-Soo Bae, Jang-Eun Lee, Hyun-Jo Kim, In-Gyu Baek | 2008-04-01 |
| 7218556 | Method of writing to MRAM devices | Hyun-Jo Kim, Jang-Eun Lee, Se-Chung Oh, Jun-Soo Bae, Kyung-Tae Nam | 2007-05-15 |
| 7141438 | Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same | Jang-Eun Lee, Hyun-Jo Kim, Se-Chung Oh, Jun-Soo Bae, In-Gyu Baek | 2006-11-28 |
| 6696328 | CMOS gate electrode using selective growth and a fabrication method thereof | Hwa-Sung Rhee, Geum-Jong Bae, Sang-Su Kim, Jung-Il Lee, Ki-Chul Kim | 2004-02-24 |