Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11784107 | Semiconductor device passive thermal management | John A. Starkovich, Jesse B. Tice | 2023-10-10 |
| 11488889 | Semiconductor device passive thermal management | John A. Starkovich, Jesse B. Tice | 2022-11-01 |
| 11018296 | Semiconductor devices using insulator-metal phase change materials and method for fabrication | Rachel A. Koltun, Benjamin Heying | 2021-05-25 |
| 10811601 | Semiconductor devices using insulator-metal phase change materials and method for fabrication | Rachel A. Koltun, Benjamin Heying | 2020-10-20 |
| 10727050 | Wafer-scale catalytic deposition of black phosphorus | Loan T. Le, Michael D. Lange, Jesse B. Tice | 2020-07-28 |
| 10497564 | Nano-imprinting using high-pressure crystal phase transformations | Loan T. Le, Benjamin Poust | 2019-12-03 |
| 9735545 | Vertical cavity surface emitting laser with composite reflectors | Yaochung Chen, Xianglin ZENG | 2017-08-15 |
| 9484284 | Microfluidic impingement jet cooled embedded diamond GaN HEMT | Benjamin Poust, Dino Ferizovic, Stanton Earl Weaver, Gary Dwayne Mandrusiak | 2016-11-01 |
| 9196703 | Selective deposition of diamond in thermal vias | Karl D. Hobart, Tatyana I. Feygelson, Eugene I. Imhoff, Travis J. Anderson, Joshua D. Caldwell +8 more | 2015-11-24 |
| 8710511 | AIN buffer N-polar GaN HEMT profile | Xing Gu, Benjamin Heying | 2014-04-29 |
| 8575657 | Direct growth of diamond in backside vias for GaN HEMT devices | Rajinder Sandhu, Benjamin Poust, Michael Wojtowicz | 2013-11-05 |
| 8431962 | Composite passivation process for nitride FET | Benjamin Heying, Ioulia Smorchkova, Robert Coffie | 2013-04-30 |
| 7893423 | Electrical circuit device having carbon nanotube fabrication from crystallography oriented catalyst | Roger Tsai | 2011-02-22 |
| 7678672 | Carbon nanotube fabrication from crystallography oriented catalyst | Roger Tsai | 2010-03-16 |
| 7645626 | Multiple GaInNAs quantum wells for high power applications | Wonill Ha, James S. Harris, Jr. | 2010-01-12 |
| 7632726 | Method for fabricating a nitride FET including passivation layers | Benjamin Heying, Ioulia Smorchkova, Robert Coffie | 2009-12-15 |
| 7084040 | Method for growth of group III-V semiconductor material on a dielectric | Donald J. Sawdai | 2006-08-01 |
| 6798809 | GaInNAsSb quantum well semiconductor devices | Wonill Ha, James S. Harris, Jr. | 2004-09-28 |