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Spin-charge conversion based spin logic device |
Jongill Hong, Saeroonter Oh |
2025-07-29 |
| 11475948 |
Memory device and operating method of memory device |
Jongryul Kim, Jinyoung Kim |
2022-10-18 |
| 11127457 |
Memory device with reduced read disturbance and method of operating the memory device |
Jongryul Kim, Dueung Kim, Jongmin Baek |
2021-09-21 |
| 11100990 |
Memory device for avoiding multi-turn on of memory cell during reading, and operating method thereof |
Ji Hoon Lim, Jongryul Kim, Venkataramana Gangasani |
2021-08-24 |
| 11100959 |
Variable resistance memory device |
Kyu-Rie Sim |
2021-08-24 |
| 11011228 |
Memory device having an increased sensing margin |
Yongsung Cho, Junho Shin, Makoto Hirano |
2021-05-18 |
| 10998038 |
Memory device and method of operating the same |
Jongryul Kim, Dueung Kim, Jongmin Baek |
2021-05-04 |
| 10263645 |
Error correction and decoding |
Seong-Ook Jung, Sara Choi, Byung Kyu Song, Jisu Kim, Jung Pill Kim +3 more |
2019-04-16 |
| 9852783 |
Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages |
Byung Kyu Song, Seong-Ook Jung, Jung Pill Kim, Seung H. Kang |
2017-12-26 |
| 9800271 |
Error correction and decoding |
Seong-Ook Jung, Sara Choi, Byung Kyu Song, Jisu Kim, Jung Pill Kim +3 more |
2017-10-24 |
| 9728259 |
Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin |
Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang |
2017-08-08 |
| 9691462 |
Latch offset cancelation for magnetoresistive random access memory |
Seong-Ook Jung, Byungkyu Song, Jung Pill Kim, Seung H. Kang |
2017-06-27 |
| 9666259 |
Dual mode sensing scheme |
Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang |
2017-05-30 |
| 9502091 |
Sensing circuit for resistive memory cells |
Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang |
2016-11-22 |
| 9502088 |
Constant sensing current for reading resistive memory |
Seong-Ook Jung, Sara Choi, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2016-11-22 |
| 9406354 |
System, apparatus, and method for an offset cancelling single ended sensing circuit |
Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2016-08-02 |
| 9390779 |
System and method of sensing a memory cell |
Seong-Ook Jung, Jisu Kim, Seung H. Kang, Jung Pill Kim |
2016-07-12 |
| 9378781 |
System, apparatus, and method for sense amplifiers |
Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2016-06-28 |
| 9281039 |
System and method to provide a reference cell using magnetic tunnel junction cells |
Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2016-03-08 |
| 9165630 |
Offset canceling dual stage sensing circuit |
Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2015-10-20 |
| 9111623 |
NMOS-offset canceling current-latched sense amplifier |
Seong-Ook Jung, Ji Su Kim, Jung Pill Kim, Seung H. Kang |
2015-08-18 |
