SL

Shin-Ae Lee

Samsung: 20 patents #6,655 of 75,807Top 9%
MA Mandom: 1 patents #323 of 647Top 50%
Overall (All Time): #208,004 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
10696296 Vehicle control apparatus and method for controlling vehicle 2020-06-30
7871914 Methods of fabricating semiconductor devices with enlarged recessed gate electrodes Seong-Ho Kim, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim, Dong-Gun Park 2011-01-18
7615429 Methods of fabricating field effect transistors having multiple stacked channels Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Seong-Ho Kim 2009-11-10
7541656 Semiconductor devices with enlarged recessed gate electrodes Seong-Ho Kim, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim, Dong-Gun Park 2009-06-02
7541645 Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions Sung Min Kim, Dong-Gun Park, Sung-Young Lee, Hye-Jin Cho, Eun-Jung Yun +2 more 2009-06-02
7534707 MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim, Seong-Ho Kim 2009-05-19
7473963 Metal oxide semiconductor (MOS) transistors having three dimensional channels Sung Min Kim, Dong Won Kim, Eun-Jung Yun, Dong-Gun Park, Sung-Young Lee +2 more 2009-01-06
7397131 Self-aligned semiconductor contact structures Seong-Ho Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim 2008-07-08
7381601 Methods of fabricating field effect transistors having multiple stacked channels Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Seong-Ho Kim 2008-06-03
7285466 Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels Sung Min Kim, Dong Won Kim, Eun-Jung Yun, Dong-Gun Park, Sung-Young Lee +2 more 2007-10-23
7154154 MOS transistors having inverted T-shaped gate electrodes Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim, Seong-Ho Kim 2006-12-26
7148527 Semiconductor devices with enlarged recessed gate electrodes Seong-Ho Kim, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim, Dong-Gun Park 2006-12-12
7132349 Methods of forming integrated circuits structures including epitaxial silicon layers in active regions Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Seong-Ho Kim 2006-11-07
7129541 Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate Sung Min Kim, Hye-Jin Cho, Eun-Jung Yun, Dong-Gun Park 2006-10-31
7122431 Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions Sung Min Kim, Dong-Gun Park, Sung-Young Lee, Hye-Jin Cho, Eun-Jung Yun +2 more 2006-10-17
7071517 Self-aligned semiconductor contact structures and methods for fabricating the same Seong-Ho Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim 2006-07-04
7026688 Field effect transistors having multiple stacked channels Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Seong-Ho Kim 2006-04-11
7015549 Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Seong-Ho Kim 2006-03-21
7002207 Field effect transistors having multiple stacked channels Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Seong-Ho Kim 2006-02-21
6940129 Double gate MOS transistors Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Seong-Ho Kim 2005-09-06
6875666 Methods of manufacturing transistors and transistors having an anti-punchthrough region Chang-Sub Lee, Jeong-Dong Choi, Seong-Ho Kim, Sung Min Kim, Dong-Gun Park 2005-04-05