RW

Robertus A. M. Wolters

U.S. Philips: 12 patents #185 of 8,851Top 3%
NB Nxp B.V.: 2 patents #1,098 of 3,591Top 35%
Overall (All Time): #353,537 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8138768 Sensing circuit for devices with protective coating Johannes A. J. Van Geloven, Nynke Verhaech 2012-03-20
7943509 Method of making an interconnect structure Roel Daamen, Martinus Maas, Pascal Bancken, Julien M. M. Michelon 2011-05-17
6140173 Method of manufacturing a semiconductor device comprising a ferroelectric memory element Johanna H. H. M. Kemperman 2000-10-31
5858183 Method of manufacturing semiconductor devices each including a semiconductor body with a surface provided with a metallization having a Ti layer and a TiN layer Edwin T. Swart 1999-01-12
5744832 Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier Johanna H. H. M. Kemperman 1998-04-28
5554559 Method of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectric Poul K. Larsen, Mathieu J. E. Ulenaers 1996-09-10
5399235 Method of manufacturing a semiconductor device in which a surface of a semiconductor body is provided with mutually-insulated aluminum tracks Cornelis A. H. A. Mutsaers 1995-03-21
5396095 Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor Poul K. Larsen, Mathieu J. E. Ulenaers 1995-03-07
5366928 Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body Alexander G. M. Jonkers 1994-11-22
5360994 Semiconductor device having a surface with a barrier layer of Ti.sub.x W.sub.1-x Edwin T. Swart, Albertus G. Dirks 1994-11-01
5278450 Semiconductor contact with discontinuous noble metal Edwin T. Swart, Andreas Martinus Theodorus Paulus Van Der Putten 1994-01-11
5266524 Method of manufacturing a semiconductor device whereby a layer containing aluminium is deposited on a surface of a semiconductor body 1993-11-30
5160762 Method of manufacturing mono-layer capacitors Hans-Wolfgang Brand, Mareike Klee, Johan de Vries, Rainer Waser 1992-11-03
5122477 Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes Mathieu J. E. Ulenaers 1992-06-16