| 6198115 |
IGBT with reduced forward voltage drop and reduced switching loss |
Richard Francis |
2001-03-06 |
| 6043112 |
IGBT with reduced forward voltage drop and reduced switching loss |
Richard Francis |
2000-03-28 |
| 5904510 |
Power transistor device having ultra deep increased concentration region |
Herbert J. Gould |
1999-05-18 |
| 5859465 |
High voltage power schottky with aluminum barrier metal spaced from first diffused ring |
Kyle Spring |
1999-01-12 |
| 5831318 |
Radhard mosfet with thick gate oxide and deep channel region |
Kyle Spring |
1998-11-03 |
| 5661314 |
Power transistor device having ultra deep increased concentration |
Herbert J. Gould |
1997-08-26 |
| 5654206 |
Amorphous silicon layer for top surface of semiconductor device |
— |
1997-08-05 |
| 5592006 |
Gate resistor for IGBT |
— |
1997-01-07 |
| 5523604 |
Amorphous silicon layer for top surface of semiconductor device |
— |
1996-06-04 |
| 5475252 |
Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
Kyle Spring |
1995-12-12 |
| 5338693 |
Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
Daniel M. Kinzer, Kyle Spring |
1994-08-16 |
| 4783694 |
Integrated bipolar-MOS semiconductor device with common collector and drain |
Rodney R. Stoltenburg |
1988-11-08 |
| 4506280 |
Transistor with improved power dissipation capability |
— |
1985-03-19 |
