MT

Misaichi Takeuchi

RI Riken: 1 patents #679 of 1,824Top 40%
Sharp Kabushiki Kaisha: 1 patents #6,861 of 10,731Top 65%
TT The Ritsumeikan Trust: 1 patents #34 of 141Top 25%
UN Unknown: 1 patents #29,356 of 83,584Top 40%
Samsung: 1 patents #49,284 of 75,807Top 70%
Overall (All Time): #1,473,863 of 4,157,543Top 40%
3
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9899565 Method of manufacturing semiconductor substrate including separating two semiconductor layers from a growth substrate Young-jo Tak, Sam Mook KANG, Mi Hyun Kim, Jun-youn Kim, Young-soo Park 2018-02-20
8698168 Semiconductor device having aluminum nitride layer with void formed therein Yoshihiro Ueta, Masataka Ohta, Yoshinobu Aoyagi 2014-04-15
6530991 Method for the formation of semiconductor layer Satoru Tanaka, Yoshinobu Aoyagi 2003-03-11