| 10014294 |
Semiconductor integrated circuit device having enhancement type NMOS and depression type MOS with N-type channel impurity region and P-type impurity layer under N-type channel impurity region |
Hirofumi Harada |
2018-07-03 |
| 9804628 |
Reference voltage generator |
Yoshitsugu Hirose |
2017-10-31 |
| 9552009 |
Reference voltage generator having diode-connected depletion MOS transistors with same temperature coefficient |
Hideo Yoshino |
2017-01-24 |
| 9524961 |
Semiconductor device |
Hisashi Hasegawa, Takayuki Takashina, Hiroyuki Masuko |
2016-12-20 |
| 9276065 |
Semiconductor device and method of manufacturing the same |
— |
2016-03-01 |
| 9213415 |
Reference voltage generator |
Hideo Yoshino, Jun Osanai, Yoshitsugu Hirose |
2015-12-15 |
| 8847308 |
Semiconductor device having a trench structure |
— |
2014-09-30 |
| 8716142 |
Semiconductor device and method of manufacturing the same |
— |
2014-05-06 |
| 8643093 |
Semiconductor device and method of manufacturing the same |
— |
2014-02-04 |
| 8598026 |
Semiconductor device and method of manufacturing the same |
— |
2013-12-03 |
| 8236648 |
Trench MOS transistor and method of manufacturing the same |
— |
2012-08-07 |
| 8053820 |
Semiconductor device and method of manufacturing the same |
— |
2011-11-08 |