KY

Kye-Hee Yeom

Samsung: 15 patents #9,125 of 75,807Top 15%
Overall (All Time): #321,773 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
9536868 Semiconductor device Keun-Nam Kim, Sun Young Park, Soo-Ho Shin, Hyeon-Woo Jang, Jin Won Jeong +2 more 2017-01-03
9177891 Semiconductor device including contact pads Keun-Nam Kim, Sun Young Park, Soo-Ho Shin, Hyeon-Woo Jang, Jin Won Jeong +2 more 2015-11-03
8704284 Semiconductor device having bit line expanding islands 2014-04-22
8674420 Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes 2014-03-18
8569860 Semiconductor devices having line type active regions and methods of fabricating the same 2013-10-29
8486818 Semiconductor devices including buried gate electrodes and isolation layers and methods of forming semiconductor devices including buried gate electrodes and isolation layers using self aligned double patterning 2013-07-16
8399917 Semiconductor devices including buried gate electrodes including bitline shoulder attack protection and methods of forming such semiconductor devices 2013-03-19
8120123 Semiconductor device and method of forming the same Makoto Yoshida, Hyeong-Sun Hong, Dae-Ik Kim, Yong-Il Kim 2012-02-21
7829959 Semiconductor devices having line type active regions and methods of fabricating the same 2010-11-09
7563699 Semiconductor devices having line type active regions and methods of fabricating the same 2009-07-21
7332427 Method of forming an interconnection line in a semiconductor device 2008-02-19
6544873 Methods of fabricating integrated circuit field effect transistors including multilayer gate electrodes having narrow and wide conductive layers Duck-Hyung Lee 2003-04-08
6218272 Method for fabricating conductive pad Kyu-pil Lee 2001-04-17
6156636 Method of manufacturing a semiconductor device having self-aligned contact holes Kyu-pil Lee 2000-12-05
6091120 Integrated circuit field effect transisters including multilayer gate electrodes having narrow and wide conductive layers Duck-Hyung Lee 2000-07-18