Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12049710 | Group-III nitride substrate | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi +1 more | 2024-07-30 |
| 11879184 | Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Shigeyoshi USAMI, Masayuki Hoteida +1 more | 2024-01-23 |
| 11859311 | Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II) | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Shigeyoshi USAMI, SHUNICHI MATSUNO | 2024-01-02 |
| 11795573 | Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi +1 more | 2023-10-24 |
| 11753739 | Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5 | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi | 2023-09-12 |
| 11713517 | Group-III nitride substrate | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi +1 more | 2023-08-01 |
| 11713516 | Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi +1 more | 2023-08-01 |
| 11624128 | Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi +1 more | 2023-04-11 |
| 11396716 | Group-III nitride substrate containing carbon at a surface region thereof | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi +1 more | 2022-07-26 |
| 11186922 | Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions | Masayuki Hoteida, SHUNICHI MATSUNO | 2021-11-30 |
| 11155931 | Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5 | Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira KITAMOTO, Tomoaki Sumi | 2021-10-26 |