Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12394759 | Semiconductor device and circuit device | Yasutaka Nakashiba, Kazuhisa Mori, Toshiyuki Hata | 2025-08-19 |
| 12125905 | Semiconductor device | Yoshinori Kaya, Katsumi Eikyu, Akihiro Shimomura, Kazuhisa Mori | 2024-10-22 |
| 11557648 | Semiconductor device and method of manufacturing the same | Katsumi Eikyu, Masami Sawada, Akihiro Shimomura, Kazuhisa Mori | 2023-01-17 |
| 11362207 | Semiconductor device | Atsushi Sakai, Satoru TOKUDA, Ryuuji Umemoto, Katsumi Eikyu | 2022-06-14 |
| 11004749 | Semiconductor device and method of manufacturing the same | Taro Moriya, Kazuhisa Mori | 2021-05-11 |
| 10763336 | Semiconductor device and method for manufacturing the same | — | 2020-09-01 |
| 10529846 | Semiconductor device and method of manufacturing the same | Taro Moriya, Hiroyoshi KUDOU | 2020-01-07 |
| 10250255 | Semiconductor device and circuit arrangement using the same | — | 2019-04-02 |
| 9960269 | Semiconductor device and method of manufacturing the same | Hiroyoshi KUDOU | 2018-05-01 |
| 9698773 | Semiconductor device | — | 2017-07-04 |
| 7884421 | Semiconductor device and method of manufacturing the same | — | 2011-02-08 |
| 7733133 | Power switch circuit having variable resistor coupled between input terminal and output transistor and changing its resistance based on state of output transistor | Masaki Kojima | 2010-06-08 |
| 7439795 | Charge pump circuit with reduced parasitic capacitance | Masayuki Ida, Kazunori Doi | 2008-10-21 |
| 7400163 | Dead time control circuit capable of adjusting temperature characteristics of dead time | Mitsuru Yoshida | 2008-07-15 |
| 6384453 | High withstand voltage diode and method for manufacturing same | — | 2002-05-07 |
| 6002158 | High breakdown-voltage diode with electric-field relaxation region | — | 1999-12-14 |
| 5767556 | Field effect transistor | — | 1998-06-16 |
| 5596216 | Semiconductor device with diode and capable of device protection | — | 1997-01-21 |
| 5523601 | High-breakdown-voltage MOS transistor | — | 1996-06-04 |