| 11522132 |
Storage device and storage unit with a chalcogen element |
Kazuhiro Ohba, Seiji Nonoguchi, Takeyuki Sone, Minoru Ikarashi |
2022-12-06 |
| 11462685 |
Switch device, storage apparatus, and memory system incorporating boron and carbon |
Kazuhiro Ohba, Shuichiro Yasuda |
2022-10-04 |
| 11183633 |
Switch device, storage apparatus, and memory system |
Kazuhiro Ohba, Takeyuki Sone, Seiji Nonoguchi, Minoru Ikarashi |
2021-11-23 |
| 11152428 |
Selection device and storage apparatus |
Minoru Ikarashi, Takeyuki Sone, Seiji Nonoguchi, Kazuhiro Ohba |
2021-10-19 |
| 11004902 |
Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element |
Minoru Ikarashi, Seiji Nonoguchi, Takeyuki Sone, Kazuhiro Ohba, Jun Okuno |
2021-05-11 |
| 10879312 |
Memory device and memory unit |
Kazuhiro Ohba, Seiji Nonoguchi |
2020-12-29 |
| 10804321 |
Switch device and storage unit |
Kazuhiro Ohba, Seiji Nonoguchi, Takeyuki Sone, Minoru Ikarashi |
2020-10-13 |
| 10529777 |
Switch device and storage unit |
Kazuhiro Ohba |
2020-01-07 |
| 10418416 |
Memory device and memory unit |
Kazuhiro Ohba, Seiji Nonoguchi |
2019-09-17 |
| 10403680 |
Switch device and storage unit |
Kazuhiro Ohba, Seiji Nonoguchi, Takeyuki Sone, Minoru Ikarashi |
2019-09-03 |
| 10084017 |
Switch device and storage unit having a switch layer between first and second electrodes |
Kazuhiro Ohba |
2018-09-25 |
| 9761796 |
Storage device and storage unit with ion source layer and resistance change layer |
Kazuhiro Ohba |
2017-09-12 |
| 9543512 |
Switch device and storage unit |
Kazuhiro Ohba |
2017-01-10 |
| 9466791 |
Storage device and storage unit |
Kazuhiro Ohba, Takeyuki Sone, Minoru Ikarashi |
2016-10-11 |
| 9263670 |
Memory element and memory device |
Shuichiro Yasuda, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada |
2016-02-16 |
| 9246090 |
Storage device and storage unit |
Kazuhiro Ohba, Takeyuki Sone, Minoru Ikarashi |
2016-01-26 |
| 9202560 |
Memory element and memory device with ion source layer and resistance change layer |
Tetsuya Mizuguchi, Kazuhiro Ohba, Shuichiro Yasuda, Masayuki Shimuta, Akira Kouchiyama |
2015-12-01 |
| 9112149 |
Memory element and method of manufacturing the same, and memory device |
Shuichiro Yasuda, Masayuki Shimuta, Katsuhisa Aratani, Akira Kouchiyama, Tetsuya Mizuguchi +1 more |
2015-08-18 |
| 8847194 |
Memory component including an ion source layer and a resistance change layer, and a memory device using the same |
Shuichiro Yasuda, Katsuhisa Aratani, Kazuhiro Ohba |
2014-09-30 |
| 8710482 |
Memory component and memory device |
Shuichiro Yasuda, Katsuhisa Aratani, Kazuhiro Ohba |
2014-04-29 |
| 8546782 |
Memory element and memory device |
Shuichiro Yasuda, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada |
2013-10-01 |