Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12224340 | Heterojunction semiconductor device with low on-resistance | Siyang Liu, Chi Zhang, Kui Xiao, Dejin Wang, Jiaxing Wei +3 more | 2025-02-11 |
| 12205996 | LDMOS device and method for preparation thereof | Huajun JIN | 2025-01-21 |
| 11552164 | Semiconductor device and manufacturing method therefor | Huajun JIN | 2023-01-10 |
| 11462628 | Semiconductor device, and manufacturing method thereof | Huajun JIN | 2022-10-04 |
| 11158737 | LDMOS component, manufacturing method therefor, and electronic device | Huajun JIN, Hongfeng Jin | 2021-10-26 |
| 11127840 | Method for manufacturing isolation structure for LDMOS | Shukun Qi | 2021-09-21 |
| 10811520 | Semiconductor device and method for manufacturing same | Huajun JIN | 2020-10-20 |
| 10505036 | Lateral diffused metal oxide semiconductor field effect transistor | Shukun Qi | 2019-12-10 |
| 10381343 | Electrostatic protection device of LDMOS silicon controlled structure | Jun Sun, Zhongyu Lin, Guangyang Wang | 2019-08-13 |
| 10290705 | Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor | Feng Huang, Guangtao Han, Feng Lin, Longjie Zhao, Huatang Lin +1 more | 2019-05-14 |
| 10199495 | Laterally diffused metal-oxide semiconductor field-effect transistor | Shukun Qi | 2019-02-05 |
| 10014392 | Laterally diffused metal-oxide-semiconductor field-effect transistor | Shukun Qi, Guangsheng Zhang, Sen Zhang | 2018-07-03 |
| 9947785 | Junction field effect transistor and manufacturing method therefor | Guangtao Han | 2018-04-17 |
| 9865702 | Method for manufacturing laterally insulated-gate bipolar transistor | Feng Huang, Guangtao Han, Feng Lin, Longjie Zhao, Huatang Lin +4 more | 2018-01-09 |
| 9768292 | Laterally diffused metal oxide semiconductor device and manufacturing method therefor | Shu Zhang, Guangtao Han | 2017-09-19 |
| 9716169 | Lateral double diffused metal oxide semiconductor field-effect transistor | Feng Huang, Guangtao Han | 2017-07-25 |