Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11968907 | Magnetoresistive memory device including a magnetoresistance amplification layer | Lei Wan | 2024-04-23 |
| 11839162 | Magnetoresistive memory device including a plurality of reference layers | Alan Kalitsov, Derek Stewart, Bhagwati Prasad | 2023-12-05 |
| 11361805 | Magnetoresistive memory device including a reference layer side dielectric spacer layer | Wonjoon Jung, Bhagwati Prasad | 2022-06-14 |
| 11004489 | Perpendicular spin transfer torque MRAM memory cell with in-stack thermal barriers | Tiffany Santos, Michael Grobis | 2021-05-11 |
| 10957346 | Magnetic recording devices and methods using a write-field-enhancement structure and bias current with offset pulses | Gonçalo Marcos Baião De Albuquerque, Yunfei Ding, Alexander Goncharov, Kuok San Ho, Daniele Mauri +2 more | 2021-03-23 |
| 10891999 | Perpendicular SOT MRAM | Michael Grobis | 2021-01-12 |
| 10832750 | Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin | Tiffany Santos, Jui-Lung Li | 2020-11-10 |
| 10777248 | Heat assisted perpendicular spin transfer torque MRAM memory cell | Neil Smith, Michael Grobis, Michael Nicolas Albert Tran | 2020-09-15 |
| 10726893 | Perpendicular SOT-MRAM memory cell using spin swapping induced spin current | Oleksandr Mosendz | 2020-07-28 |
| 10643642 | Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field | Gonçalo Marcos Baião De Albuquerque, Yunfei Ding, Alexander Goncharov, Kuok San Ho, Daniele Mauri +2 more | 2020-05-05 |
| 10388305 | Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field | Gonçalo Marcos Baião De Albuquerque, Yunfei Ding, Alexander Goncharov, Kuok San Ho, Daniele Mauri +2 more | 2019-08-20 |
| 10381552 | SOT MRAM cell with perpendicular free layer and its cross-point array realization | Neil Smith | 2019-08-13 |
| 10290337 | Three terminal SOT memory cell with anomalous hall effect | Neil Smith | 2019-05-14 |
| 10276783 | Gate voltage controlled perpendicular spin orbit torque MRAM memory cell | Jeffrey S. Lille | 2019-04-30 |
| 10211393 | Spin accumulation torque MRAM | Neil Smith, Jordan Asher Katine, Neil Leslie Robertson | 2019-02-19 |
| 10134457 | Cross-point spin accumulation torque MRAM | Jordan Asher Katine, Neil Leslie Robertson, Neil Smith | 2018-11-20 |
| 10056430 | MRAM with voltage dependent in-plane magnetic anisotropy | Jordan Asher Katine | 2018-08-21 |
| 9953692 | Spin orbit torque MRAM memory cell with enhanced thermal stability | Ching Hwa Tsang | 2018-04-24 |
| 9830966 | Three terminal SOT memory cell with anomalous Hall effect | Neil Smith | 2017-11-28 |
| 9429633 | Magnetic sensor utilizing rashba effect in a two-dimensional conductor | Petrus Antonius Van Der Heijden | 2016-08-30 |
| 9293160 | Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor | Neil Smith | 2016-03-22 |
| 9177576 | Giant magneto resistive sensor and method for making same | Matthew J. Carey, Jeffrey R. Childress, Young-Suk Choi, John Creighton Read, Neil Smith | 2015-11-03 |
| 9099119 | Magnetic read sensor using spin hall effect | Petrus Antonius Van Der Heijden | 2015-08-04 |