Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9401319 | Semiconductor device | Takuya Oga, Kazuyasu Sakamoto, Tsuyoshi Sugihara, Masaki Kato, Daisuke Nakashima +1 more | 2016-07-26 |
| 7876291 | Drive device | Hideto Kobayashi, Yoshihiro Shigeta, Hiroshi Shimabukuro | 2011-01-25 |
| 7714363 | Semiconductor integrated circuit for driving the address of a display device | Takahiro Nomiyama, Yoshihiro Shigeta | 2010-05-11 |
| 7687385 | Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same | Kazuo Matsuzaki, Naoto Fujishima, Akio Kitamura, Masaru Saito | 2010-03-30 |
| 7606082 | Semiconductor circuit, inverter circuit, semiconductor apparatus, and manufacturing method thereof | Hiroshi Shimabukuro, Hideto Kobayashi, Yoshihiro Shigeta | 2009-10-20 |
| 7195980 | Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same | Kazuo Matsuzaki, Naoto Fujishima, Akio Kitamura, Masaru Saito | 2007-03-27 |
| 7173454 | Display device driver circuit | Hideto Kobayashi, Yoshihiro Shigeta, Hiroshi Shimabukuro | 2007-02-06 |
| 6853034 | Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same | Kazuo Matsuzaki, Naoto Fujishima, Akio Kitamura, Masaru Saito | 2005-02-08 |
| 6844598 | Lateral high breakdown voltage MOSFET and device provided therewith | Masaru Saito | 2005-01-18 |
| 6818954 | Lateral high breakdown voltage MOSFET and device provided therewith | Masaru Saito | 2004-11-16 |
| 6740952 | High withstand voltage semiconductor device | Naoto Fujishima, Akio Kitamura, Masaru Saito | 2004-05-25 |
| 6558983 | Semiconductor apparatus and method for manufacturing the same | Masaru Saitou, Akio Kitamura | 2003-05-06 |
| 6525390 | MIS semiconductor device with low on resistance and high breakdown voltage | Akio Kitamura, Masaru Saito, Naoto Fujishima | 2003-02-25 |
| 6316794 | Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region | Masaru Saitou, Akio Kitamura | 2001-11-13 |
| 5973366 | High voltage integrated circuit | — | 1999-10-26 |
| 5612564 | Semiconductor device with limiter diode | Naoto Fujishima | 1997-03-18 |
| 5545577 | Method of producing a semiconductor device having two MIS transistor circuits | — | 1996-08-13 |
| 5497021 | CMOS structure with varying gate oxide thickness and with both different and like conductivity-type gate electrodes | — | 1996-03-05 |
| 5495122 | Insulated-gate semiconductor field effect transistor which operates with a low gate voltage and high drain and source voltages | — | 1996-02-27 |
| 5436486 | High voltage MIS transistor and semiconductor device | Naoto Fujishima, Akio Kitamura | 1995-07-25 |
| 5432370 | High withstand voltage M I S field effect transistor and semiconductor integrated circuit | Akio Kitamura, Naoto Fujishima | 1995-07-11 |