Issued Patents All Time
Showing 25 most recent of 112 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12094932 | Power devices having tunable saturation current clamps therein that support improved short-circuit capability | — | 2024-09-17 |
| 11276779 | Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit | — | 2022-03-15 |
| 10804393 | Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes | — | 2020-10-13 |
| 10355132 | Power MOSFETs with superior high frequency figure-of-merit | — | 2019-07-16 |
| 7041559 | Methods of forming power semiconductor devices having laterally extending base shielding regions | — | 2006-05-09 |
| 6800897 | Integrated circuit power devices having junction barrier controlled schottky diodes therein | — | 2004-10-05 |
| 6791143 | Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through | — | 2004-09-14 |
| 6784486 | Vertical power devices having retrograded-doped transition regions therein | — | 2004-08-31 |
| 6781194 | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein | — | 2004-08-24 |
| 6764889 | Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes | — | 2004-07-20 |
| 6653691 | Radio frequency (RF) power devices having faraday shield layers therein | — | 2003-11-25 |
| 6649975 | Vertical power devices having trench-based electrodes therein | — | 2003-11-18 |
| 6621121 | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes | — | 2003-09-16 |
| 6586833 | Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines | — | 2003-07-01 |
| 6545316 | MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same | — | 2003-04-08 |
| 6525372 | Vertical power devices having insulated source electrodes in discontinuous deep trenches | — | 2003-02-25 |
| 6388286 | Power semiconductor devices having trench-based gate electrodes and field plates | — | 2002-05-14 |
| 6365462 | Methods of forming power semiconductor devices having tapered trench-based insulating regions therein | — | 2002-04-02 |
| 6313482 | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein | — | 2001-11-06 |
| 6303410 | Methods of forming power semiconductor devices having T-shaped gate electrodes | — | 2001-10-16 |
| 6191447 | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same | — | 2001-02-20 |
| 6075259 | Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages | — | 2000-06-13 |
| 6023078 | Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability | — | 2000-02-08 |
| 5998833 | Power semiconductor devices having improved high frequency switching and breakdown characteristics | — | 1999-12-07 |
| 5950076 | Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein | — | 1999-09-07 |