Issued Patents All Time
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6562706 | Structure and manufacturing method of SiC dual metal trench Schottky diode | Chih-Wei Hsu, Ming-Jer Kao, Jeng-Hua Wei | 2003-05-13 |
| 6396090 | Trench MOS device and termination structure | Chih-Wei Hsu, Ming-Che Kao, Ming-Jinn Tsai, Pu-Ju Kung | 2002-05-28 |
| 6350636 | Junction leakage monitor for MOSFETs with silicide contacts | Kun-Yue Lee | 2002-02-26 |
| 6309929 | Method of forming trench MOS device and termination structure | Chih-Wei Hsu, Ming-Che Kao, Ming-Jinn Tsai, Pu-Ju Kung | 2001-10-30 |
| 6165807 | Method for forming junction leakage monitor for mosfets with silicide contacts | Kun-Yue Lee | 2000-12-26 |
| 5981999 | Power trench DMOS with large active cell density | Chien-Chung Hung, Ming-Jinn Tsai, Ming-Jer Kao, June-Min Yao | 1999-11-09 |