Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9048052 | Electromechanical microswitch for switching an electrical signal, microelectromechanical system, integrated circuit, and method for producing an integrated circuit | Mehmet Kaynak, Mario Birkholz, Bernd Tillack, René Scholz | 2015-06-02 |
| 8330237 | Corrosion-resistant MEMS component and method for the production thereof | Jürgen Drews, Katrin Schulz | 2012-12-11 |
| 8035167 | Complementary bipolar semiconductor device | Dieter Knoll, Bernd Heinemann | 2011-10-11 |
| 7595534 | Layers in substrate wafers | Bernd Heinemann, Dieter Knoll, Bernd Tillack, Dirk Wolansky, Peter Schley | 2009-09-29 |
| 7323390 | Semiconductor device and method for production thereof | Bernd Heinemann, Dieter Knoll, Holger Rücker | 2008-01-29 |
| 7307336 | BiCMOS structure, method for producing the same and bipolar transistor for a BiCMOS structure | Alexander J. Fox, Dieter Knoll, Bernd Heinemann, Steffen Marschmayer, Katrin Blum | 2007-12-11 |
| 7304348 | DMOS transistor | Holger Rücker, Bernd Heinemann | 2007-12-04 |
| 7284413 | Method and apparatus for measuring viscosity | Rudolf Ehwald, Dieter Knoll, Wolfgang Winkler, Henning Zinke | 2007-10-23 |
| 6878995 | Cmos-compatible lateral dmos transistor and method for producing such a transistor | Bernd Heinemann, Dieter Knoll, Wolfgang Winkler | 2005-04-12 |
| 6740560 | Bipolar transistor and method for producing same | Bernd Heinemann, Dieter Knoll | 2004-05-25 |
| 6627972 | Vertical bipolar transistor | Dieter Knoll, Bernd Heinemann | 2003-09-30 |
| 6477891 | Process for affinity viscosimetry and viscosimetric affinity sensor | Rudolf Ehwald, Andreas Thomas, Uwe Beyer | 2002-11-12 |
| 6465318 | Bipolar transistor and method for producing same | Bernd Tillack, Bernd Heinemann, Dieter Knoll, Dirk Wolansky | 2002-10-15 |
| 6267002 | Process for affinity viscosimetry and viscosimetric affinity sensor | Rudolf Ehwald, Andreas Thomas, Uwe Beyer | 2001-07-31 |
| 5786609 | Integrated horizontal unipolar transistor having a doped layer forming an internal gate of the transistor and at least one integrated capacitor having a first electrode connected to a source of the transistor and a second electrode to the fixed potential | Josef Kemmer, Gerhard Lutz, Rainer Richter | 1998-07-28 |
| 5571731 | Procedure for the manufacture of bipolar transistors without epitaxy and with fully implanted base and collector regions which are self-positioning relative to each other | Hartmut Gr utzediek, Joachim Scheerer, Wolfgang Winkler, Michel Pierschel | 1996-11-05 |