Issued Patents All Time
Showing 1–25 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11769840 | Oxide semiconductor substrate and schottky barrier diode | Shigekazu Tomai, Masatoshi Shibata, Emi KAWASHIMA, Hiromi Hayasaka | 2023-09-26 |
| 10833201 | Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms | Hirokazu Kawashima, Kazuyoshi Inoue | 2020-11-10 |
| 10644163 | Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms | Hirokazu Kawashima, Kazuyoshi Inoue | 2020-05-05 |
| 9691910 | Oxide semiconductor substrate and schottky barrier diode | Shigekazu Tomai, Masatoshi Shibata, Emi KAWASHIMA, Hiromi Hayasaka | 2017-06-27 |
| 9570631 | Oxide semiconductor substrate and schottky barrier diode | Shigekazu Tomai, Masatoshi Shibata, Emi KAWASHIMA, Hiromi Hayasaka | 2017-02-14 |
| 9269573 | Thin film transistor having crystalline indium oxide semiconductor film | Kazuyoshi Inoue, Shigekazu Tomai, Futoshi Utsuno, Masashi Kasami, Kenji Goto +1 more | 2016-02-23 |
| 9243318 | Sintered material, and process for producing same | Shigekazu Tomai, Shigeo Matsuzaki, Makoto Ando, Kazuaki Ebata, Masayuki Itose | 2016-01-26 |
| 9214519 | In2O3—SnO2—ZnO sputtering target | Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami | 2015-12-15 |
| 9209257 | Oxide sintered body and sputtering target | Futoshi Utsuno, Kazuyoshi Inoue, Hirokazu Kawashima, Masashi Kasami, Kota Terai | 2015-12-08 |
| 9202603 | Sputtering target, transparent conductive film and transparent electrode | Kazuyoshi Inoue, Nobuo Tanaka | 2015-12-01 |
| 9153438 | Sintered oxide body, target comprising the same, and oxide semiconductor thin film | Kazuaki Ebata, Shigekazu Tomai, Kazuyoshi Inoue | 2015-10-06 |
| 9136338 | Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor | Hirokazu Kawashima, Kazuyoshi Inoue | 2015-09-15 |
| 9054196 | Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn | Masayuki Itose, Mami Nishimura, Hirokazu Kawashima, Misa Sunagawa, Masashi Kasami | 2015-06-09 |
| 9039944 | Sputtering target | Kazuaki Ebata, Shigekazu Tomai, Kota Terai, Shigeo Matsuzaki | 2015-05-26 |
| 8999208 | In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element | Masayuki Itose, Mami Nishimura, Masashi Kasami | 2015-04-07 |
| 8981369 | Field effect transistor using oxide semiconductor and method for manufacturing the same | Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami | 2015-03-17 |
| 8920683 | Sputtering target, transparent conductive film and transparent electrode | Kazuyoshi Inoue, Nobuo Tanaka, Akira Kaijo, Satoshi Umeno | 2014-12-30 |
| 8871119 | Composite oxide sintered body and sputtering target comprising same | Hirokazu Kawashima | 2014-10-28 |
| 8858844 | In—Ga—Zn—O type sputtering target | Masayuki Itose | 2014-10-14 |
| 8795554 | Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target | Hirokazu Kawashima | 2014-08-05 |
| 8791457 | Oxide semiconductor field effect transistor and method for manufacturing the same | Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami | 2014-07-29 |
| 8784699 | In-Ga-Zn-type oxide, oxide sintered body, and sputtering target | Masayuki Itose, Hirokazu Kawashima | 2014-07-22 |
| 8784700 | Sputtering target and oxide semiconductor film | Kazuyoshi Inoue, Futoshi Utsuno | 2014-07-22 |
| 8785927 | Laminate structure including oxide semiconductor thin film layer, and thin film transistor | Kazuaki Ebata, Shigekazu Tomai, Yuki TSURUMA, Shigeo Matsuzaki | 2014-07-22 |
| 8778722 | TFT substrate and method for producing TFT substrate | Kazuyoshi Inoue, Nobuo Tanaka | 2014-07-15 |