Issued Patents All Time
Showing 101–125 of 138 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9588702 | Adapting erase cycle parameters to promote endurance of a memory | Thomas Mittelholzer, Thomas Parnell, Charalampos Pozidis, Gary A. Tressler | 2017-03-07 |
| 9583205 | Background threshold voltage shifting using base and delta threshold voltage shift values in non-volatile memory | Charles J. Camp, Timothy J. Fisher, Aaron D. Fry, Nikolas Ioannou, Ioannis Koltsidas +4 more | 2017-02-28 |
| 9583184 | Estimation of level-thresholds for memory cells | Thomas Mittelholzer, Thomas Parnell, Charalampos Pozidis, Milos Stanisavljevic | 2017-02-28 |
| 9576655 | Apparatus and method for programming a multi-level phase change memory (PCM) cell based on an actual resistance value and a reference resistance value | Evangelos S. Eleftheriou, Angeliki Pantazi, Haris Pozidis, Abu Sebastian | 2017-02-21 |
| 9576650 | Read measurement of a plurality of resistive memory cells for alleviating resistance and current drift | Abu Sebastian, Charalampos Pozidis | 2017-02-21 |
| 9558817 | Conditioning phase change memory cells | Charalampos Pozidis | 2017-01-31 |
| 9558107 | Extending useful life of a non-volatile memory by health grading | Charles J. Camp, Ioannis Koltsidas, Thomas Parnell, Roman A. Pletka, Charalampos Pozidis +2 more | 2017-01-31 |
| 9524775 | Correlation detector | Abu Sebastian, Tomas Tuma | 2016-12-20 |
| 9520189 | Enhanced temperature compensation for resistive memory cell circuits | Charalampos Pozidis, Milos Stanisavljevic | 2016-12-13 |
| 9513813 | Determining prefix codes for pseudo-dynamic data compression utilizing clusters formed based on compression ratio | Tobias Blaettler, Thomas Mittelholzer, Thomas Parnell, Charalampos Pozidis | 2016-12-06 |
| 9502138 | Data encoding in solid-state storage apparatus | Thomas Mittelholzer, Charalampos Pozidis | 2016-11-22 |
| 9496043 | Dynamically optimizing flash data retention or endurance based on data write frequency | Charles J. Camp, Timothy J. Fisher, Aaron D. Fry, Thomas Parnell, Charalampos Pozidis +1 more | 2016-11-15 |
| 9496031 | Method and apparatus for faster determination of a cell state of a resistive memory cell using a parallel resistor | Charalampos Pozidis, Abu Sebastian, Milos Stanisavljevic | 2016-11-15 |
| 9477540 | Multi-stage codeword detector | Theodore Antonakopoulos, Thomas Mittelholzer, Charalampos Pozidis | 2016-10-25 |
| 9466364 | Correlation detector | Abu Sebastian, Tomas Tuma | 2016-10-11 |
| 9343148 | Method and apparatus for faster determination of a cell state of a resistive memory cell using a parallel resistor | Charalampos Pozidis, Abu Sebastian, Milos Stanisavljevic | 2016-05-17 |
| 9305639 | Read-detection in multi-level cell memory | Thomas Mittelholzer, Charalampos Pozidis | 2016-04-05 |
| 9256375 | Level placement in solid-state memory | Charalampos Pozidis | 2016-02-09 |
| 9251909 | Background threshold voltage shifting using base and delta threshold voltage shift values in flash memory | Charles J. Camp, Timothy J. Fisher, Aaron D. Fry, Nikolas Ioannou, Ioannis Koltsidas +4 more | 2016-02-02 |
| 9245618 | Read measurement of resistive memory cells | Charalampos Pozidis, Abu Sebastian | 2016-01-26 |
| 9236120 | Read measurement of resistive memory cells | Charalampos Pozidis, Abu Sebastian | 2016-01-12 |
| 9202580 | Level-estimation in multi-level cell memory | Thomas Mittelholzer, Charalampos Pozidis | 2015-12-01 |
| 9190171 | Method and apparatus for read measurement of a plurality of resistive memory cells | Charalampos Pozidis, Abu Sebastian | 2015-11-17 |
| 9070438 | Programming of phase-change memory cells | Angeliki Pantazi, Charalampos Pozidis, Abu Sebastian | 2015-06-30 |
| 9064571 | Programming at least one multi-level phase change memory cell | Evangelos S. Eleftheriou, Angeliki Pantazi, Haris Pozidis, Abu Sebastian | 2015-06-23 |