Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6229189 | Multi-function optoelectronic device structure | Daniel Yap, Daniel P. Docter | 2001-05-08 |
| 5920773 | Method for making integrated heterojunction bipolar/high electron mobility transistor | Madjid Hafizi, Julia J. Brown | 1999-07-06 |
| 5889487 | Flash analog-to-digital converter with latching exclusive or gates | Lawrence M. Burns | 1999-03-30 |
| 5721503 | Flash analog-to-digital converter with latching exclusive or gates | Lawrence M. Burns | 1998-02-24 |
| 5665614 | Method for making fully self-aligned submicron heterojunction bipolar transistor | Madjid Hafizi | 1997-09-09 |
| 5572049 | Multi-layer collector heterojunction transistor | Cheng P. Wen, Chan-Shin Wu, Cheng-Keng Pao, David B. Rensch | 1996-11-05 |
| 5532486 | Heterojunction diode with low turn-on voltage | Robert A. Metzger, David B. Rensch | 1996-07-02 |
| 5468659 | Reduction of base-collector junction parasitic capacitance of heterojunction bipolar transistors | Madjid Hafizi, William W. HOOPER | 1995-11-21 |
| 5404028 | Electrical junction device with lightly doped buffer region to precisely locate a p-n junction | Robert A. Metzger, Madjid Hafizi, David B. Rensch | 1995-04-04 |
| 5365077 | Gain-stable NPN heterojunction bipolar transistor | Robert A. Metzger, Madjid Hafizi, Loren G. McCray | 1994-11-15 |
| 5349201 | NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate | Thomas C. Hasenberg | 1994-09-20 |
| 5322808 | Method of fabricating inverted modulation-doped heterostructure | April S. Brown, Joseph A. Henige, Mark Lui, Loi D. Nguyen, Robert A. Metzger | 1994-06-21 |
| 5159423 | Self-aligned, planar heterojunction bipolar transistor | Marion D. Clark, K. Vaidyanathan | 1992-10-27 |
| 5098853 | Self-aligned, planar heterojunction bipolar transistor and method of forming the same | Marion D. Clark, K. Vaidyanathan | 1992-03-24 |
| 5049522 | Semiconductive arrangement having dissimilar, laterally spaced layer structures, and process for fabricating the same | Lawrence E. Larson | 1991-09-17 |