Issued Patents All Time
Showing 26–34 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6063686 | Method of manufacturing an improved SOI (silicon-on-insulator) semiconductor integrated circuit device | Hiroo Masuda, Hisako Sato, Takahide Nakamura, Katsumi Tsuneno, Kimiko Aoyama +2 more | 2000-05-16 |
| 4819055 | Semiconductor device having a PN junction formed on an insulator film | Kazuo Nakazato, Tohru Nakamura, Takao Miyazaki, Masahiko Ogirima, Minoru Nagata | 1989-04-04 |
| 4808546 | SOI process for forming a thin film transistor using solid phase epitaxy | Masahiro Moniwa, Masanobu Miyao, Shoji Shukuri, Eiichi Murakami, Terunori Warabisako +5 more | 1989-02-28 |
| 4742025 | Method of fabricating a semiconductor device including selective etching of a silicide layer | Kiyonori Ohyu, Msao Tamura, Yasuo Wada | 1988-05-03 |
| 4729964 | Method of forming twin doped regions of the same depth by high energy implant | Masao Tamura, Yasuo Wada, Kiyonori Ohyu, Tadashi Suzuki, Hidekazu Okuhira +2 more | 1988-03-08 |
| 4655875 | Ion implantation process | Yasuo Wada, Masao Tamura, Kiyonori Ohyu | 1987-04-07 |
| 4565584 | Method of producing single crystal film utilizing a two-step heat treatment | Masao Tamura, Makoto Ohkura, Masanobu Miyao, Naotsugu Yoshihiro, Takashi Tokuyama +1 more | 1986-01-21 |
| 4498951 | Method of manufacturing single-crystal film | Masao Tamura, Naotsugu Yoshihiro, Masanobu Miyao, Makoto Ohkura, Hideo Sunami +1 more | 1985-02-12 |
| 4351674 | Method of producing a semiconductor device | Isao Yoshida, Yasuo Wada, Masao Tamura, Masanobu Miyao, Makoto Ohkura +1 more | 1982-09-28 |