| 4914488 |
Compound semiconductor structure and process for making same |
Masao Yamane, Tomoyoshi Mishima, Shigeo Goto, Susumu Takahashi |
1990-04-03 |
| 4835583 |
Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate |
Tomoyoshi Mishima, Kenji Hiruma, Yoshifumi Katayama, Yasuhiro Shiraki |
1989-05-30 |
| 4740819 |
Photo semiconductor device |
Hirobumi Ouchi, Hiroshi Matsuda, Masahiko Kawata, Kazuhiro Kurata, Yasushi Koga |
1988-04-26 |
| 4673959 |
Heterojunction FET with doubly-doped channel |
Yasuhiro Shiraki, Yoshifumi Katayama, Yoshimasa Murayama, Yasushi Sawada, Tomoyoshi Mishima +2 more |
1987-06-16 |
| 4672406 |
Semiconductor member and semiconductor device employing the same |
Yasushi Sawada, Kiichi Ueyanagi, Yoshifumi Katayama, Yasuhiro Shiraki, Takao Kuroda +1 more |
1987-06-09 |
| 4367483 |
Optical semiconductor device |
Takeo Takahashi, Kazuhiro Kurata, Yuichi Ono, Kazuhiro Ito, Mitsuhiro Mori +5 more |
1983-01-04 |
| 4212021 |
Light emitting devices |
Yuichi Ono, Mitsuhiro Mori, Kazuhiro Ito, Masahiko Kawata, Kazuhiro Kurata |
1980-07-08 |
| 4183039 |
Light emitting semiconductor device |
Masaaki Aoki, Yuichi Ono, Kazuhiro Ito, Mitshiuro Mori, Kazuhiro Kurata |
1980-01-08 |