KK

Kenichi Kuroda

HI Hitachi: 52 patents #263 of 28,497Top 1%
HE Hitachi Vlsi Engineering: 23 patents #2 of 666Top 1%
HC Hitachi Ulsi Systems Co.: 22 patents #6 of 867Top 1%
RT Renesas Technology: 21 patents #53 of 3,337Top 2%
Mitsubishi Electric: 13 patents #2,044 of 25,717Top 8%
SI Sumitomo Rubber Industries: 12 patents #153 of 1,637Top 10%
RE Renesas Electronics: 6 patents #669 of 4,529Top 15%
University of Michigan: 2 patents #1,079 of 4,352Top 25%
Sumitomo Electric Industries: 2 patents #9,741 of 21,551Top 50%
Colgate-Palmolive: 1 patents #1,266 of 2,015Top 65%
HI Hitchi: 1 patents #1 of 56Top 2%
Ricoh Company: 1 patents #6,936 of 9,818Top 75%
📍 Ann Arbor, MI: #29 of 6,071 inventorsTop 1%
🗺 Michigan: #190 of 86,293 inventorsTop 1%
Overall (All Time): #11,877 of 4,157,543Top 1%
110
Patents All Time

Issued Patents All Time

Showing 101–110 of 110 patents

Patent #TitleCo-InventorsDate
5352620 Method of making semiconductor device with memory cells and peripheral transistors Kazuhiro Komori, June Sugiura 1994-10-04
5270944 Semiconductor integrated circuit device and process for manufacturing the same Akinori Matsuo 1993-12-14
5194924 Semiconductor device of an LDD structure having a floating gate Kazuhiro Komori, June Sugiura 1993-03-16
5182719 Method of fabricating a second semiconductor integrated circuit device from a first semiconductor integrated circuit device Akinori Matsuo 1993-01-26
5098855 Semiconductor device and method of producing the same Kazuhiro Komori, June Sugiura 1992-03-24
5057448 Method of making a semiconductor device having DRAM cells and floating gate memory cells 1991-10-15
4918501 Semiconductor device and method of producing the same Kazuhiro Komori, June Sugiura 1990-04-17
4784968 Process for manufacturing a semiconductor device having MIS-type field effect transistors with impurity region below the gate electrode Kazuhiro Komori, Kousuke Okuyama 1988-11-15
4697198 MOSFET which reduces the short-channel effect Kazuhiro Komori, Kousuke Okuyama 1987-09-29
4663645 Semiconductor device of an LDD structure having a floating gate Kazuhiro Komori, June Sugiura 1987-05-05