MP

Mustafa Pinarbasi

HG HGST: 100 patents #2 of 1,677Top 1%
IBM: 72 patents #999 of 70,183Top 2%
SM Spin Memory: 36 patents #1 of 49Top 3%
I( Integrated Silicon Solution, (Cayman): 16 patents #1 of 36Top 3%
ST Spin Transfer Technologies: 13 patents #1 of 25Top 4%
SO Solopower: 8 patents #3 of 19Top 20%
HB Hgst Netherlands, B.V.: 3 patents #257 of 972Top 30%
🗺 California: #342 of 386,348 inventorsTop 1%
Overall (All Time): #1,966 of 4,157,543Top 1%
251
Patents All Time

Issued Patents All Time

Showing 201–225 of 251 patents

Patent #TitleCo-InventorsDate
6652906 Fabrication of a magnetoresistance sensor structure having a spacer layer produced by multiple deposition and oxidation steps 2003-11-25
6636400 Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer James Mac Freitag 2003-10-21
6631549 Method of making a seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor 2003-10-14
6624985 Pinning layer seeds for CPP geometry spin valve sensors James Mac Freitag 2003-09-23
6594884 Method of making a multilayered pinned layer structure for improved coupling field and GMR for spin valve 2003-07-22
6594123 AP pinned spin valve read head with a negative ferromagnetic field biased for zero asymmetry Hardayal Singh Gill 2003-07-15
6583969 Pinned layer structure having nickel iron film for reducing coercivity of a free layer structure in a spin valve sensor 2003-06-24
6560078 Bilayer seed layer for spin valves 2003-05-06
6552881 Spin valve sensor with magnetic and nonmagnetic layers for improving asymmetry and softness of a free layer structure 2003-04-22
6460243 Method of making low stress and low resistance rhodium (RH) leads 2002-10-08
6437950 Top spin valve sensor that has an iridium manganese (IrMn) pinning layer and an iridium manganese oxide (IrMnO) seed layer Phong V. Chau, Hua Ai Zeng, Patrick Rush Webb 2002-08-20
6430013 Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer 2002-08-06
6428657 Magnetic read head sensor with a reactively sputtered pinning layer structure 2002-08-06
6413380 Method and apparatus for providing deposited layer structures and articles so produced 2002-07-02
6404606 Seed layer structure for a platinum manganese pinning layer in a spin valve sensor 2002-06-11
6398924 Spin valve sensor with improved pinning field between nickel oxide (NiO) pinning layer and pinned layer 2002-06-04
6381106 Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layer 2002-04-30
6353519 Spin valve sensor having antiparallel (AP) pinned layer structure with high resistance and low coercivity 2002-03-05
6353518 Spin valve sensor having antiparallel (AP) pinned layer structure with low coercivity and high resistance 2002-03-05
6327122 Spin valve sensor having antiparallel (AP) pinned layer with high resistance and low coercivity 2001-12-04
6315839 Method of making a keeper layer for a spin valve sensor with low intrinsic anisotropy field Robert Langland Smith 2001-11-13
6317299 Seed layer for improving pinning field spin valve sensor 2001-11-13
6306266 Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance Serhat Metin, Patrick Rush Webb 2001-10-23
6296741 Method of making oxide barrier layer for a spin tunnel junction 2001-10-02
6295187 Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer 2001-09-25