Issued Patents All Time
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12396375 | Resistive random-access memory devices with engineered electronic defects and methods for making the same | Ning Ge | 2025-08-19 |
| 12382847 | Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers | Ning Ge | 2025-08-05 |
| 12302768 | Resistive random-access memory devices with multi-component electrodes | Ning Ge | 2025-05-13 |
| 12232332 | Integrated sensing and machine learning processing devices | Ning Ge | 2025-02-18 |
| 12213390 | Resistive random-access memory devices with multi-component electrodes | Ning Ge | 2025-01-28 |
| 12137622 | Forming-free random-access memory (RRAM) devices | Mingche Wu, Ning Ge | 2024-11-05 |
| 12127487 | Low current RRAM-based crossbar array circuits implemented with interface engineering technologies | Ning Ge | 2024-10-22 |
| 12120887 | Increasing selector surface area in crossbar array circuits | Ning Ge | 2024-10-15 |
| 11985911 | Methods for fabricating resistive random-access memory stacks | Ning Ge | 2024-05-14 |
| 11616196 | Low current RRAM-based crossbar array circuit implemented with switching oxide engineering technologies | Ning Ge | 2023-03-28 |
| 11532668 | Increasing selector surface area in crossbar array circuits | Ning Ge | 2022-12-20 |
| 11527712 | Low current RRAM-based crossbar array circuits implemented with interface engineering technologies | Ning Ge | 2022-12-13 |
| 11283018 | RRAM-based crossbar array circuits with increased temperature stability for analog computing | Ning Ge | 2022-03-22 |
| 11283014 | RRAM crossbar array circuits with specialized interface layers for low current operation | Ning Ge | 2022-03-22 |
| 11217630 | Implementing memristor crossbar array using non-filamentary RRAM cells | Ning Ge | 2022-01-04 |
| 11177438 | Patterning oxidation resistant electrode in crossbar array circuits | Ning Ge | 2021-11-16 |
| 11043265 | Memory devices with volatile and non-volatile behavior | Zhiyong Li, Lu Zhang | 2021-06-22 |
| 10930706 | Reducing RRAM relaxation in crossbar arrays for low current applications | Ning Ge | 2021-02-23 |
| 10873024 | Providing thermal shield to RRAM cells | Ning Ge | 2020-12-22 |
| 10804324 | 1T2R RRAM cell and common reactive electrode in crossbar array circuits | Ning Ge | 2020-10-13 |
| 10147762 | Protective elements for non-volatile memory cells in crossbar arrays | Jianhua Yang, R. Stanley Williams | 2018-12-04 |
| 10096651 | Resistive memory devices and arrays | Jianhua Yang, Ning Ge, Katy Samuels | 2018-10-09 |
| 10026894 | Memristors with oxide switching layers | Ning Ge, Jianhua Yang, Zhiyong Li, Katy Samuels | 2018-07-17 |
| 9889659 | Printhead with a memristor | Ning Ge, Jianhua Yang | 2018-02-13 |
| 9885937 | Dynamic optical crossbar array | Jianhua Yang, Alexandre M. Bratkovski, David A. Fattal | 2018-02-06 |