Issued Patents All Time
Showing 51–75 of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6625059 | Synthetic ferrimagnet reference layer for a magnetic storage device | Manish Sharma | 2003-09-23 |
| 6608790 | Write current compensation for temperature variations in memory arrays | Manoj Bhattacharyya | 2003-08-19 |
| 6607924 | Solid-state memory with magnetic storage cells | James A. Brug, Thomas Anthony, Manoj Bhattacharyya, Janice H. Nickel | 2003-08-19 |
| 6603678 | Thermally-assisted switching of magnetic memory elements | Janice H. Nickel | 2003-08-05 |
| 6597598 | Resistive cross point memory arrays having a charge injection differential sense amplifier | Frederick Perner | 2003-07-22 |
| 6593608 | Magneto resistive storage device having double tunnel junction | Manish Sharma | 2003-07-15 |
| 6584029 | One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells | Thomas Anthony, Frederick Perner | 2003-06-24 |
| 6584589 | Self-testing of magneto-resistive memory arrays | Frederick Perner, Kenneth J. Eldredge | 2003-06-24 |
| 6577529 | Multi-bit magnetic memory device | Manish Sharma, Thomas Anthony | 2003-06-10 |
| 6577549 | Write current compensation for temperature variations in memory arrays | Manoj Bhattacharyya | 2003-06-10 |
| 6576969 | Magneto-resistive device having soft reference layer | Manish Sharma | 2003-06-10 |
| 6574129 | Resistive cross point memory cell arrays having a cross-couple latch sense amplifier | — | 2003-06-03 |
| 6567301 | One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same | Thomas Anthony | 2003-05-20 |
| 6541792 | Memory device having dual tunnel junction memory cells | Heon Lee | 2003-04-01 |
| 6538920 | Cladded read conductor for a pinned-on-the-fly soft reference layer | Manish Sharma | 2003-03-25 |
| 6538917 | Read methods for magneto-resistive device having soft reference layer | Manish Sharma | 2003-03-25 |
| 6515896 | Memory device with short read time | — | 2003-02-04 |
| 6507513 | Using delayed electrical pulses with magneto-resistive devices | Manish Sharma, Manoj Bhattacharyya | 2003-01-14 |
| 6504742 | 3-D memory device for large storage capacity | Thomas Anthony | 2003-01-07 |
| 6504221 | Magneto-resistive device including soft reference layer having embedded conductors | Manish Sharma, Manoj Bhattacharyya | 2003-01-07 |
| 6483734 | Memory device having memory cells capable of four states | Manish Sharma | 2002-11-19 |
| 6473337 | Memory device having memory cells with magnetic tunnel junction and tunnel junction in series | Manish Sharma, Thomas Anthony | 2002-10-29 |
| 6456524 | Hybrid resistive cross point memory cell arrays and methods of making the same | Frederick Perner | 2002-09-24 |
| 6434060 | Write pulse limiting for worm storage device | Manish Sharma | 2002-08-13 |
| 6434048 | Pulse train writing of worm storage device | Manish Sharma | 2002-08-13 |