Issued Patents All Time
Showing 51–75 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4904609 | Method of making symmetrical blocking high voltage breakdown semiconductor device | — | 1990-02-27 |
| 4885630 | High power multi-layer semiconductive switching device having multiple parallel contacts with improved forward voltage drop | — | 1989-12-05 |
| 4857977 | Lateral metal-oxide-semiconductor controlled triacs | — | 1989-08-15 |
| 4821095 | Insulated gate semiconductor device with extra short grid and method of fabrication | — | 1989-04-11 |
| 4816892 | Semiconductor device having turn-on and turn-off capabilities | — | 1989-03-28 |
| 4814283 | Simple automated discretionary bonding of multiple parallel elements | Stephen Daley Arthur | 1989-03-21 |
| 4809047 | Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short | — | 1989-02-28 |
| 4739387 | Amplifying gate thyristor having high gate sensitivity and high dv/dt rating | Armand P. Ferro | 1988-04-19 |
| 4648174 | Method of making high breakdown voltage semiconductor device | Wirojana Tantraporn | 1987-03-10 |
| 4646117 | Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions | — | 1987-02-24 |
| 4644637 | Method of making an insulated-gate semiconductor device with improved shorting region | — | 1987-02-24 |
| 4622572 | High voltage semiconductor device having an improved DV/DT capability and plasma spreading | — | 1986-11-11 |
| 4620211 | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices | Bantval J. Baliga, Tat-Sing P. Chow | 1986-10-28 |
| 4466176 | Process for manufacturing insulated-gate semiconductor devices with integral shorts | — | 1984-08-21 |
| 4430792 | Minimal mask process for manufacturing insulated-gate semiconductor devices with integral shorts | — | 1984-02-14 |
| 4417385 | Processes for manufacturing insulated-gate semiconductor devices with integral shorts | — | 1983-11-29 |
| 4374389 | High breakdown voltage semiconductor device | — | 1983-02-15 |
| 4352118 | Thyristor with segmented turn-on line for directing turn-on current | — | 1982-09-28 |
| 4327367 | Thyristor with even turn-on line potential and method with 1-micron to 5-mil wide alignment region band | — | 1982-04-27 |
| 4314266 | Thyristor with voltage breakover current control separated from main emitter by current limit region | — | 1982-02-02 |
| 4305084 | Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means | — | 1981-12-08 |
| 4261001 | Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity | — | 1981-04-07 |
| 4261000 | High voltage semiconductor device having an improved dv/dt capability | — | 1981-04-07 |
| 4259683 | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer | Michael Adler | 1981-03-31 |
| 4257058 | Package for radiation triggered semiconductor device and method | Armand P. Ferro | 1981-03-17 |