MI

Michinori Irikawa

FC Furukawa Electric Co.: 20 patents #53 of 2,370Top 3%
Overall (All Time): #226,470 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDate
5991473 Waveguide type semiconductor photodetector Kazuaki Nishikata 1999-11-23
5932890 Field effect transistor loaded with multiquantum barrier Kenichi Iga 1999-08-03
5926585 Waveguide type light receiving element Kazuaki Nishikata, Takehiko Nomura 1999-07-20
5920079 Semiconductive light-emitting device having strained MQW with AlGaInAs barriers Hitoshi Shimizu, Kazuaki Nishikata, Toru Fukushima 1999-07-06
5789765 Photo diode providing high-linearity signal current in response to light receiving signal Kazuaki Nishikata 1998-08-04
5789760 Multiquantum barrier Schottky junction device Kenichi Iga 1998-08-04
5739543 Optical semiconductive device with inplanar compressive strain Hitoshi Shimizu 1998-04-14
5608230 Strained superlattice semiconductor photodetector having a side contact structure Yoshiyuki Hirayama, Kazuaki Nishikata 1997-03-04
5583878 Semiconductor optical device Hitoshi Shimizu 1996-12-10
5572043 Schottky junction device having a Schottky junction of a semiconductor and a metal Hitoshi Shimizu, Yoshiyuki Hirayama 1996-11-05
5521935 Strained superlattice light emitting device 1996-05-28
5470786 Semiconductor laser device Masayuki Iwase 1995-11-28
5432124 Method of manufacturing compound semiconductor Kazuaki Nishikata, Yuji Hiratani 1995-07-11
5394424 Semiconductor laser device Tetsuro Ijichi, Ranjit S. Mand, Jingming Xu 1995-02-28
5383213 Semiconductor device with current confinement structure Masayuki Iwase, Kenichi Iga 1995-01-17
5362974 Group II-VI material semiconductor optical device with strained multiquantum barriers Kenichi Iga 1994-11-08
5319661 Semiconductor double heterostructure laser device with InP current blocking layer Masayuki Iwase 1994-06-07
5251224 Quantum barrier semiconductor optical device Masayuki Iwase 1993-10-05
5214662 Semiconductor optical devices with pn current blocking layers of wide-band gap materials Masayuki Iwase 1993-05-25
5173912 Double-carrier confinement laser diode with quantum well active and SCH structures Masayuki Iwase, Randit S. Mand 1992-12-22