MS

Masashi Shima

FL Fujitsu Semiconductor Limited: 31 patents #5 of 1,301Top 1%
Fujitsu Limited: 11 patents #2,845 of 24,456Top 15%
SO Socionext: 4 patents #56 of 541Top 15%
FL Fujitsu Microelectronics Limited: 3 patents #51 of 624Top 9%
Overall (All Time): #56,634 of 4,157,543Top 2%
49
Patents All Time

Issued Patents All Time

Showing 26–49 of 49 patents

Patent #TitleCo-InventorsDate
8158498 P-channel MOS transistor and fabrication process thereof Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami, Naoyoshi Tamura 2012-04-17
8143675 Semiconductor device and method of manufacturing semiconductor device 2012-03-27
8106467 Semiconductor device having carrier mobility raised by generating strain in channel region 2012-01-31
8080845 Semiconductor device 2011-12-20
8072031 P-channel MOS transistor and semiconductor integrated circuit device 2011-12-06
8067291 MOS field-effect transistor and manufacturing method thereof 2011-11-29
8049251 Semiconductor device and method for manufacturing the same 2011-11-01
7994586 Semiconductor device and manufacturing method of the same 2011-08-09
7816766 Semiconductor device with compressive and tensile stresses Naoyoshi Tamura, Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami 2010-10-19
7791064 Semiconductor device and fabrication method thereof Yosuke Shimamune, Akira Katakami, Akiyoshi Hatada, Naoyoshi Tamura 2010-09-07
7667227 Semiconductor device and fabrication method thereof Yosuke Shimamune, Akira Katakami, Akiyoshi Hatada, Naoyoshi Tamura 2010-02-23
7518188 P-channel MOS transistor and fabrication process thereof Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami, Naoyoshi Tamura 2009-04-14
7476941 Semiconductor integrated circuit device and fabrication process thereof Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami, Naoyoshi Tamura 2009-01-13
7456473 MOS field effect transistor and manufacture method thereof 2008-11-25
7435656 Semiconductor device of transistor structure having strained semiconductor layer 2008-10-14
7378305 Semiconductor integrated circuit and fabrication process thereof Akiyoshi Hatada, Akira Katakami, Naoyoshi Tamura, Yosuke Shimamune, Hiroyuki Ohta 2008-05-27
7262465 P-channel MOS transistor and fabrication process thereof Akiyoshi Hatada, Akira Katakami, Naoyoshi Tamura, Yosuke Shimamune 2007-08-28
7202120 Semiconductor integrated circuit device and fabrication process thereof Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami, Naoyoshi Tamura 2007-04-10
7030465 Semiconductor device that can increase the carrier mobility and method for fabricating the same 2006-04-18
6930374 Semiconductor device of transistor structure having strained semiconductor layer 2005-08-16
6777728 Semiconductor device and complementary semiconductor device Tetsuji Ueno, Yoshiki Sakuma, Shunji Nakamura 2004-08-17
6459120 Semiconductor device and manufacturing method of the same 2002-10-01
6380604 Quantum semiconductor device having quantum dots and optical detectors using the same 2002-04-30
5591994 Compound semiconductor field effect transistor having a controlled diffusion profile of impurity elements Naoki Hara, Shigeru Kuroda 1997-01-07