Tomoharu Awaya — 14 Patents at Fujitsu Limited

Tomoharu Awaya has been granted 14 US patents while listed as an inventor at Fujitsu Limited. The first was granted in 1988 and the most recent in June 2020. Tomoharu Awaya ranks #332,869 of 4,157,543 US inventors in our database (top 8.0%). Patent records list Tomoharu Awaya in Kawasaki, JP.

Patents per Year

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #	Title	Co-Inventors	Date
10672720	Semiconductor device and method of producing semiconductor device	Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Koji Banno, Takayoshi Minami	2020-06-02
10147687	Semiconductor device and method of producing semiconductor device	Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Koji Banno, Takayoshi Minami	2018-12-04
9881878	Semiconductor device and method of producing semiconductor device	Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Koji Banno, Takayoshi Minami	2018-01-30
9824981	Semiconductor device and method of producing semiconductor device	Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Koji Banno, Takayoshi Minami	2017-11-21
8928396	Electronic circuit and semiconductor device	Jun Nagayama	2015-01-06
8514638	Write control circuit and semiconductor device	Tsuyoshi Koyashiki, Jun Nagayama, Masahito Isoda	2013-08-20
8193614	Semiconductor device, moisture-resistant frame, groove and method of producing semiconductor device	Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Koji Banno, Takayoshi Minami	2012-06-05
7673266	Timing analysis method and apparatus, computer-readable program and computer-readable storage medium	Masamichi Kamiyama	2010-03-02
5576996	Semiconductor memory device having a variably write pulse width capability	Masaya Sugimoto	1996-11-19
4796233	Bipolar-transistor type semiconductor memory device having redundancy configuration	Isao Fukushi	1989-01-03
4783781	Semiconductor memory device having redundancy configuration with read circuit for defective memory address	—	1988-11-08
4757475	Semiconductor memory device having diode matrix type decoder and redundancy configuration	—	1988-07-12
4745582	Bipolar-transistor type random access memory device having redundancy configuration	Isao Fukushi	1988-05-17
4740918	Emitter coupled semiconductor memory device having a low potential source having two states	Yoshinori Okajima	1988-04-26