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Redundancy substitution method, semiconductor memory device and information processing apparatus |
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2007-09-04 |
| 7227784 |
Nonvolatile semiconductor memory device performing erase operation that creates narrow threshold distribution |
— |
2007-06-05 |
| 6928000 |
Semiconductor memory device having a resistance adjustment unit |
Yoshikazu Homma |
2005-08-09 |
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Semiconductor device having a high-speed data read operation |
Yoshikazu Homma |
2004-05-11 |
| 6532174 |
Semiconductor memory device having high speed data read operation |
Yoshikazu Homma |
2003-03-11 |
| 6215717 |
Semiconductor memory device for reducing a time needed for performing a protecting operation |
Haruo Shoji |
2001-04-10 |
| 5770963 |
Flash memory with improved erasability and its circuitry |
Takao Akaogi, Hiromi Kawashima, Ryoji Hagiwara, Yasushi Kasa, Kiyoshi Itano +2 more |
1998-06-23 |
| 5631597 |
Negative voltage circuit for a flash memory |
Takao Akaogi, Hiromi Kawashima, Ryoji Hagiwara, Yasushi Kasa, Kiyoshi Itano +2 more |
1997-05-20 |
| 5619450 |
Drive circuit for flash memory with improved erasability |
— |
1997-04-08 |
| 5608670 |
Flash memory with improved erasability and its circuitry |
Takao Akaogi, Hiromi Kawashima, Ryoji Hagiwara, Yasushi Kasa, Kiyoshi Itano +2 more |
1997-03-04 |
| 5592419 |
Flash memory with improved erasability and its circuitry |
Takao Akaogi, Hiromi Kawashima, Ryoji Hagiwara, Yasushi Kasa, Kiyoshi Itano +2 more |
1997-01-07 |
| 5576637 |
XOR CMOS logic gate |
Takao Akaogi, Hiromi Kawashima, Ryoji Hagiwara, Yasushi Kasa, Kiyoshi Itano +2 more |
1996-11-19 |
| 5400276 |
Electrically erasable nonvolatile semiconductor memory that permits data readout despite the occurrence of over-erased memory cells |
— |
1995-03-21 |
| 4720818 |
Semiconductor memory device adapted to carry out operation test |
— |
1988-01-19 |
