Issued Patents All Time
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4875085 | Semiconductor device with shallow n-type region with arsenic or antimony and phosphorus | Osamu Hataishi | 1989-10-17 |
| 4629520 | Method of forming shallow n-type region with arsenic or antimony and phosphorus | Osamu Hataishi | 1986-12-16 |