Issued Patents All Time
Showing 51–75 of 95 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6475864 | Method of manufacturing a super-junction semiconductor device with an conductivity type layer | Takahiro Sato, Katsunori Ueno, Kenji Kunihara, Yasuhiko Onishi, Susumu Iwamoto | 2002-11-05 |
| 6462382 | MOS type semiconductor apparatus | Kazuhiko Yoshida, Motoi Kudoh, Shoichi Furuhata, Shigeyuki Takeuchi | 2002-10-08 |
| 6383836 | Diode and method for manufacturing the same | Yasushi Miyasaka | 2002-05-07 |
| 6323539 | High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor | Yukio Yano, Shigeyuki Obinata, Naoki Kumagai | 2001-11-27 |
| 6294818 | Parallel-stripe type semiconductor device | — | 2001-09-25 |
| 6291856 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same | Yasushi Miyasaka, Yasuhiko Ohnishi, Katsunori Ueno, Susumu Iwamoto | 2001-09-18 |
| 6246092 | High breakdown voltage MOS semiconductor apparatus | Takeyoshi Nishimura, Takashi Kobayashi | 2001-06-12 |
| 6229180 | MOS type semiconductor apparatus | Kazuhiko Yoshida, Motoi Kudoh, Shoichi Furuhata, Shigeyuki Takeuchi | 2001-05-08 |
| 6221688 | Diode and method for manufacturing the same | Yasushi Miyasaka | 2001-04-24 |
| 6175143 | Schottky barrier | Yasushi Miyasaka | 2001-01-16 |
| 6124628 | High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor | Yukio Yano, Shigeyuki Obinata, Naoki Kumagai | 2000-09-26 |
| 6097063 | Semiconductor device having a plurality of parallel drift regions | — | 2000-08-01 |
| 5990518 | MOS device | Takashi Kobayashi, Takeyoshi Nishimura | 1999-11-23 |
| 5972768 | Method of manufacturing semiconductor device having low contact resistance | Yoshihiko Nagayasu, Kazutoshi Sugimura, Yoichi Ryokai | 1999-10-26 |
| 5970964 | Circuit device for igniting internal combustion engine and semiconductor device for igniting internal combustion engine | Shoichi Furuhata, Shigeyuki Takeuchi | 1999-10-26 |
| 5973359 | MOS type semiconductor device | Takashi Kobayashi, Shigeyuki Takeuchi, Yoshiki Kondo, Shoichi Furuhata | 1999-10-26 |
| 5912491 | MOS device | Takashi Kobayashi, Takeyoshi Nishimura | 1999-06-15 |
| 5869372 | Method of manufacturing a power semiconductor device | Seiji Momota, Takeyoshi Nishimura, Kazutoshi Sugimura, Masao Yoshino, Takashi Kobayashi | 1999-02-09 |
| 5828081 | Integrated semiconductor device | Kazuhiko Yoshida | 1998-10-27 |
| 5811996 | Gate drive circuit having reduced current-consumption and rapid inductive energy dissipation | Kazunori Oyabe, Kazuhiko Yoshida, Yukio Yano | 1998-09-22 |
| 5757046 | MOS type semiconductor device | Takeyoshi Nishimura, Takashi Kobayashi, Toshihiro Arai | 1998-05-26 |
| 5736774 | High voltage integrated circuit, and high voltage level shift unit used for the same | — | 1998-04-07 |
| 5736769 | Semiconductor apparatus | Akira Nishiura | 1998-04-07 |
| 5723890 | MOS type semiconductor device | Takeyoshi Nishimura, Takashi Kobayashi | 1998-03-03 |
| 5621601 | Over-current protection apparatus for transistor | Shin Kiuchi, Kazuhiko Yoshida, Yukio Yano, Kazunori Oyabe, Shoichi Furuhata +1 more | 1997-04-15 |