Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6740952 | High withstand voltage semiconductor device | Naoto Fujishima, Gen Tada, Masaru Saito | 2004-05-25 |
| 6730961 | Semiconductor device | — | 2004-05-04 |
| 6639287 | Semiconductor integrated circuit device | — | 2003-10-28 |
| 6570237 | Semiconductor device with a protective diode having a high breakdown voltage | — | 2003-05-27 |
| 6558983 | Semiconductor apparatus and method for manufacturing the same | Masaru Saitou, Gen Tada | 2003-05-06 |
| 6525390 | MIS semiconductor device with low on resistance and high breakdown voltage | Gen Tada, Masaru Saito, Naoto Fujishima | 2003-02-25 |
| 6459101 | Semiconductor device | Naoto Fujishima | 2002-10-01 |
| 6316794 | Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region | Masaru Saitou, Gen Tada | 2001-11-13 |
| 6174792 | Method of manufacturing a semiconductor device | — | 2001-01-16 |
| 6075276 | ESD protection device using Zener diodes | — | 2000-06-13 |
| 5981997 | Horizontal field effect transistor and method of manufacturing the same | — | 1999-11-09 |
| 5917217 | Lateral field effect transistor and method of manufacturing the same | Naoto Fujishima | 1999-06-29 |
| 5909758 | Supporting tool and method of installing same | — | 1999-06-08 |
| 5885878 | Lateral trench MISFET and method of manufacturing the same | Naoto Fujishima | 1999-03-23 |
| 5844275 | High withstand-voltage lateral MOSFET with a trench and method of producing the same | Naoto Fujishima | 1998-12-01 |
| 5760440 | Back-source MOSFET | Naoto Fujishima | 1998-06-02 |
| 5705842 | Horizontal MOSFET | Naoto Fujishima | 1998-01-06 |
| 5701026 | Lateral trench MISFET | Naoto Fujishima | 1997-12-23 |
| 5633525 | Lateral field effect transistor | Naoto Fujishima | 1997-05-27 |
| 5591657 | Semiconductor apparatus manufacturing method employing gate side wall self-aligning for masking | Naoto Fujishima, Yoshihiko Nagayasu | 1997-01-07 |
| 5523599 | High voltage MIS field effect transistor | Naoto Fujishima | 1996-06-04 |
| 5502323 | Lateral type field effect transistor | Naoto Fujishima | 1996-03-26 |
| 5461259 | High-current integrated circuit | Yukio Yano | 1995-10-24 |
| 5436486 | High voltage MIS transistor and semiconductor device | Naoto Fujishima, Gen Tada | 1995-07-25 |
| 5432370 | High withstand voltage M I S field effect transistor and semiconductor integrated circuit | Naoto Fujishima, Gen Tada | 1995-07-11 |