Issued Patents All Time
Showing 1–25 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10297676 | Partially biased isolation in semiconductor device | Xin Lin, Ronghua Zhu | 2019-05-21 |
| 10217860 | Partially biased isolation in semiconductor devices | Daniel J. Blomberg, Xu Cheng, Xin Lin, Zhihong Zhang, Jiang-Kai Zuo | 2019-02-26 |
| 10177252 | Semiconductor device isolation with RESURF layer arrangement | Xin Lin, Ronghua Zhu, Jiang-Kai Zuo | 2019-01-08 |
| 9941350 | Semiconductor device isolation via depleted coupling layer | Xin Lin, Ronghua Zhu, Jiang-Kai Zuo | 2018-04-10 |
| 9871135 | Semiconductor device and method of making | Xin Lin, Ronghua Zhu, Jiang-Kai Zuo | 2018-01-16 |
| 9831338 | Alternating source region arrangement | Xin Lin, Ronghua Zhu, Jiang-Kai Zuo | 2017-11-28 |
| 9825169 | Partial, self-biased isolation in semiconductor devices | Xin Lin, Xu Cheng, Zhihong Zhang, Jiang-Kai Zuo | 2017-11-21 |
| 9761707 | Laterally diffused MOSFET with isolation region | Xin Lin, Ronghua Zhu | 2017-09-12 |
| 9728600 | Partially biased isolation in semiconductor devices | Daniel J. Blomberg, Xu Cheng, Xin Lin, Zhihong Zhang, Jiang-Kai Zuo | 2017-08-08 |
| 9691880 | Semiconductor device with enhanced 3D resurf | Xin Lin, Zhihong Zhang, Jiang-Kai Zuo | 2017-06-27 |
| 9680011 | Self-adjusted isolation bias in semiconductor devices | Zhihong Zhang, Daniel J. Blomberg, Xu Cheng, Xin Lin, Jiang-Kai Zuo | 2017-06-13 |
| 9666671 | Semiconductor device with composite drift region and related fabrication method | Zhihong Zhang, Jiang-Kai Zuo | 2017-05-30 |
| 9647082 | Diodes with multiple junctions | Xin Lin, Daniel J. Blomberg, Jiang-Kai Zuo | 2017-05-09 |
| 9640635 | Reliability in mergeable semiconductor devices | Zhihong Zhang, Daniel J. Blomberg, Jiang-Kai Zuo | 2017-05-02 |
| 9614074 | Partial, self-biased isolation in semiconductor devices | Xin Lin, Jiang-Kai Zuo | 2017-04-04 |
| 9614041 | Multi-gate semiconductor devices with improved hot-carrier injection immunity | Zhihong Zhang, Jiang-Kai Zuo | 2017-04-04 |
| 9601614 | Composite semiconductor device with different channel widths | Won Gi Min, Pete Rodriquez, Jiang-Kai Zuo | 2017-03-21 |
| 9601595 | High breakdown voltage LDMOS device | Daniel J. Blomberg, Jiang-Kai Zuo | 2017-03-21 |
| 9590097 | Semiconductor devices and related fabrication methods | Daniel J. Blomberg, Xin Lin, Zhihong Zhang, Jiang-Kai Zuo | 2017-03-07 |
| 9543454 | Diodes with multiple junctions | Xin Lin, Daniel J. Blomberg, Jiang-Kai Zuo | 2017-01-10 |
| 9543379 | Semiconductor device with peripheral breakdown protection | Xin Lin, Zhihong Zhang, Jiang-Kai Zuo | 2017-01-10 |
| 9508845 | LDMOS device with high-potential-biased isolation ring | Xin Lin, Jiang-Kai Zuo | 2016-11-29 |
| 9496333 | Resurf high voltage diode | Xin Lin, Daniel J. Blomberg, Jiang-Kai Zuo | 2016-11-15 |
| 9490322 | Semiconductor device with enhanced 3D resurf | Xin Lin, Zhihong Zhang, Jiang-Kai Zuo | 2016-11-08 |
| 9478456 | Semiconductor device with composite drift region | Jiang-Kai Zuo | 2016-10-25 |