RT

Ru-Chin Tu

FI Formosa Epitaxy Incorporation: 10 patents #10 of 54Top 20%
IT ITRI: 1 patents #5,197 of 9,619Top 55%
📍 Tainan, TW: #579 of 4,566 inventorsTop 15%
Overall (All Time): #469,828 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
7307291 Gallium-nitride based ultraviolet photo detector Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2007-12-11
7180097 High-brightness gallium-nitride based light emitting diode structure Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2007-02-20
7180096 Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2007-02-20
7105850 GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2006-09-12
7087922 Light-emitting diode structure Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2006-08-08
7087924 Gallium-nitride based light emitting diode structure with enhanced light illuminance Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2006-08-08
7049638 High-brightness gallium-nitride based light emitting diode structure Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2006-05-23
7042019 Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structure Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2006-05-09
7042018 Structure of GaN light-emitting diode Liang-Wen Wu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien 2006-05-09
6979835 Gallium-nitride based light-emitting diode epitaxial structure Cheng-Tsang Yu, Liang-Wen Wu, Tzu-Chi Wen, Fen-Ren Chien 2005-12-27
6969627 Light-emitting diode and the manufacturing method of the same Shyi-Ming Pan, Jenq-Dar Tsay, Jung-Tsung Hsu 2005-11-29