Issued Patents All Time
Showing 1–25 of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8557674 | High voltage semiconductor device including field shaping layer and method of fabricating the same | Yong-cheol Choi, Min Kim | 2013-10-15 |
| 8399923 | High voltage semiconductor device including field shaping layer and method of fabricating the same | Yong-cheol Choi, Min Kim | 2013-03-19 |
| 8330218 | Semiconductor device and method of fabricating the same | Jong-Ho Park, Hyi-Jeong Park, Hye Mi Kim | 2012-12-11 |
| 8242007 | Semiconductor device formed using single polysilicon process and method of fabricating the same | Jong-Ho Park, Hyi-Jeong Park | 2012-08-14 |
| 8217487 | Power semiconductor device | Yongcheol Choi, Minsuk Kim, Donghwan Kim | 2012-07-10 |
| 8097510 | Method of forming lateral trench gate FET with direct source-drain current path | Gary M. Dolny | 2012-01-17 |
| 8072029 | High voltage semiconductor device with floating regions for reducing electric field concentration | Yong-cheol Choi, Sang Hyun Lee | 2011-12-06 |
| 7906828 | High-voltage integrated circuit device including high-voltage resistant diode | Sung-lyong Kim | 2011-03-15 |
| 7888768 | Power integrated circuit device having embedded high-side power switch | Sung-lyong Kim, Jong-jib Kim, Jong-Tae Hwang | 2011-02-15 |
| 7804150 | Lateral trench gate FET with direct source-drain current path | Gary M. Dolny | 2010-09-28 |
| 7803676 | Semiconductor device and method of fabricating the same | Jong-Ho Park, Hyi-Jeong Park, Hye Mi Kim | 2010-09-28 |
| 7777524 | High voltage semiconductor device having shifters and method of fabricating the same | Min Kim, Yong-cheol Choi | 2010-08-17 |
| 7655979 | High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor | Sung-Iyong Kim, Tae-hun Kwon | 2010-02-02 |
| 7605040 | Method of forming high breakdown voltage low on-resistance lateral DMOS transistor | Yong-cheol Choi, Cheol Joong Kim | 2009-10-20 |
| 7518209 | Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuit | Sung-lyong Kim | 2009-04-14 |
| 7309894 | High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor | Sung-lyong Kim, Tae-hun Kwon | 2007-12-18 |
| 7265416 | High breakdown voltage low on-resistance lateral DMOS transistor | Yong-cheol Choi, Cheol Joong Kim | 2007-09-04 |
| 6995453 | High voltage integrated circuit including bipolar transistor within high voltage island area | Jong-jib Kim, Sung-lyong Kim, Young-Suk Choi, Min Hwan Kim | 2006-02-07 |
| 6909143 | Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance | Jong-jib Kim, Young-Suk Choi | 2005-06-21 |
| 6888210 | Lateral DMOS transistor having reduced surface field | Min Hwan Kim, Sung-lyong Kim | 2005-05-03 |
| 6833585 | High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage | Min Hwan Kim, Young-Suk Choi | 2004-12-21 |
| 6600206 | High voltage semiconductor device having high breakdown voltage isolation region | Sung-Iyong Kim, Jong-jib Kim | 2003-07-29 |
| 6489652 | Trench DMOS device having a high breakdown resistance | Young Soo Jang | 2002-12-03 |
| 6486512 | Power semiconductor device having high breakdown voltage and method for fabricating the same | Jong-jib Kim, Young-Suk Choi, Chang-seong Choi, Min-whan Kim | 2002-11-26 |
| 6268626 | DMOS field effect transistor with improved electrical characteristics and method for manufacturing the same | — | 2001-07-31 |