Issued Patents All Time
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7186632 | Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon | Kazuo Ogawa, Kiyonori Ohyu, Kensuke Okonogi, Keiichi Watanabe, Hiroyuki Ohta | 2007-03-06 |