TT

Tatsunori Toyota

DC Dowa Electronics Materials Co.: 11 patents #18 of 241Top 8%
DC Dowa Holdings Co.: 2 patents #13 of 77Top 20%
WA Wavesquare: 2 patents #7 of 7Top 100%
📍 Tokyo, MO: #141 of 223 inventorsTop 65%
Overall (All Time): #461,737 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
10475964 Method of producing n-type ohmic electrode and n-type ohmic electrode, n-type electrode, and III nitride semiconductor light-emitting device 2019-11-12
9318653 Luminescent device and manufacturing method for luminescent device and semiconductor device Yoshitaka Kadowaki 2016-04-19
9287366 III nitride semiconductor device and method of producing the same Yoshitaka Kadowaki 2016-03-15
9263642 III nitride semiconductor light emitting device and method for manufacturing the same Tomohiko Shibata 2016-02-16
9082893 Luminescent device and manufacturing method for luminescent device and semiconductor device Yoshitaka Kadowaki 2015-07-14
9012935 Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Yoshitaka Kadowaki 2015-04-21
8962362 Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Yoshitaka Kadowaki 2015-02-24
8878189 Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same Ryuichi Toba, Masahito Miyashita, Yoshitaka Kadowaki 2014-11-04
8860294 Light emitting element and method for manufacturing the same Yutaka Ohta 2014-10-14
8765584 Semiconductor device and manufacturing method therefor Yoshitaka Kadowaki 2014-07-01
8736025 III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity Ryuichi Toba, Masahito Miyashita 2014-05-27