IG

Itaru Gunjishima

DE Denso: 9 patents #1,418 of 11,792Top 15%
TL Toyota Central R&D Labs: 6 patents #153 of 1,657Top 10%
SK Showa Denko K.K.: 4 patents #353 of 1,736Top 25%
TO Toyota: 3 patents #8,352 of 26,838Top 35%
Overall (All Time): #506,976 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
10236338 SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method Yuuki Furuya, Tomohiro Shonai, Yasushi Urakami 2019-03-19
10125435 SiC single crystal, SiC wafer, SiC substrate, and SiC device Yusuke Kanzawa, Yasushi Urakami, Masakazu Kobayashi 2018-11-13
9534317 Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal Keisuke Shigetoh, Yasushi Urakami, Akihiro Matsuse 2017-01-03
9166008 SiC single crystal, SiC wafer, and semiconductor device Yasushi Urakami, Ayumu Adachi 2015-10-20
9145622 Manufacturing method of silicon carbide single crystal Yasushi Urakami, Ayumu Adachi 2015-09-29
9096947 SiC single crystal, production method therefor, SiC wafer and semiconductor device Keisuke Shigetoh, Yasushi Urakami, Masanori Yamada, Ayumu Adachi, Masakazu Kobayashi 2015-08-04
9051663 Manufacturing method of silicon carbide single crystal Yasushi Urakami, Ayumu Adachi 2015-06-09
9048102 SiC single crystal, SiC wafer, and semiconductor device Yasushi Urakami, Ayumu Adachi 2015-06-02
8936682 Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects Yasushi Urakami, Ayumu Adachi 2015-01-20
7135074 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal Daisuke Nakamura, Naohiro Sugiyama, Fusao Hirose 2006-11-14