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USPTO Patent Rankings Data through Dec 31, 2025
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Daniel Carleton Driscoll — 12 Patents

CRCree: 9 patents #166 of 639Top 30%
CRCreeled: 3 patents #24 of 96Top 25%
Cary, NC: #542 of 3,681 inventorsTop 15%
North Carolina: #4,293 of 45,564 inventorsTop 10%
Overall (All Time): #396,045 of 4,157,543Top 10%
12 Patents All Time
Daniel Carleton Driscoll has been granted 12 US patents while listed as an inventor at Cree. The first was granted in 2010 and the most recent in September 2024. Daniel Carleton Driscoll ranks #396,045 of 4,157,543 US inventors in our database (top 9.5%). Patent records list Daniel Carleton Driscoll in Cary, NC, US.

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12094998 Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins 2024-09-17
11088295 Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins 2021-08-10
D920934 Light emitting diode chip William Sheldon Taylor 2021-06-01
10756231 Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins 2020-08-25 $79,438,000
10224454 Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins 2019-03-05 $5,433,000
9985168 Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins 2018-05-29 $9,744,000
8604461 Semiconductor device structures with modulated doping and related methods Ashonita A. Chavan, Adam William Saxler 2013-12-10 $11,467,000
8575592 Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses Michael John Bergmann, Ashonita A. Chavan, Pablo Cantu-Alejandro, James Ibbotson 2013-11-05 $13,375,000
8536615 Semiconductor device structures with modulated and delta doping and related methods Ashonita A. Chavan, Adam William Saxler 2013-09-17 $15,629,000
8409972 Light emitting diode having undoped and unintentionally doped nitride transition layer Michael John Bergmann, David T. Emerson 2013-04-02 $5,206,000
7943924 Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices Michael John Bergmann, David T. Emerson 2011-05-17 $7,262,000
7791101 Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices Michael John Bergmann, David T. Emerson 2010-09-07 $10,200,000