Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12094998 | Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers | Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins | 2024-09-17 |
| 11088295 | Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers | Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins | 2021-08-10 |
| D920934 | Light emitting diode chip | William Sheldon Taylor | 2021-06-01 |
| 10756231 | Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers | Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins | 2020-08-25 |
| 10224454 | Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers | Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins | 2019-03-05 |
| 9985168 | Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers | Thomas A. Kuhr, Robert David Schmidt, Brian T. Collins | 2018-05-29 |
| 8604461 | Semiconductor device structures with modulated doping and related methods | Ashonita A. Chavan, Adam William Saxler | 2013-12-10 |
| 8575592 | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses | Michael John Bergmann, Ashonita A. Chavan, Pablo Cantu-Alejandro, James Ibbotson | 2013-11-05 |
| 8536615 | Semiconductor device structures with modulated and delta doping and related methods | Ashonita A. Chavan, Adam William Saxler | 2013-09-17 |
| 8409972 | Light emitting diode having undoped and unintentionally doped nitride transition layer | Michael John Bergmann, David T. Emerson | 2013-04-02 |
| 7943924 | Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices | Michael John Bergmann, David T. Emerson | 2011-05-17 |
| 7791101 | Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices | Michael John Bergmann, David T. Emerson | 2010-09-07 |