BD

Benjamin Damilano

CN CNRS: 8 patents #159 of 11,908Top 2%
CEA: 1 patents #3,381 of 7,956Top 45%
SO Soitec: 1 patents #140 of 259Top 55%
Overall (All Time): #537,734 of 4,157,543Top 15%
9
Patents All Time

Issued Patents All Time

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
12342661 Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure Amélie Dussaigne, Carole Pernel, Stéphane Vezian 2025-06-24
12328975 Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN David Sotta, Mariia Rozhavskaia 2025-06-10
11217663 Semiconductor heterostructures with wurtzite-type structure on ZnO substrate Julien Brault, Mohamed Al Khalfioui, Jean-Michel Chauveau 2022-01-04
11085130 Method for producing nanostructures Stéphane Vezian, Julien Brault 2021-08-10
11047799 Device and method for providing illumination for total-internal-reflection fluorescence microscopy using opaque mask Alejandro GIACOMOTTI, Maia Brunstein, Andrea Cattoni, Sophie Bouchoule, Denis Lefebvre 2021-06-29
10103195 Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication Jean-Yves Duboz 2018-10-16
8470618 Method of manufacturing a light-emitting diode having electrically active and passive portions Jean Massies 2013-06-25
6730943 Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device Jean Massies, Nicolas Grandjean 2004-05-04
6445009 Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings Nicolas Grandjean, Jean Massies, Fabrice Semond, Mathieu Leroux 2002-09-03