Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5103270 | Double hetero type epitaxial wafer with refractive indices | Tadashige Sato, Toshio Ishiwatari | 1992-04-07 |
| 4968642 | Method of making a gallium arsenide phosphide-, mixed crystal-epitaxial wafer | Masaaki Kanayama, Takeshi Okano | 1990-11-06 |
| 4865682 | Growth method of an organic compound single crystal and a boat used therefor | Takeshi Okano, Eiichiro Nishihara | 1989-09-12 |
| 4865655 | Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded buffer layer | Masaaki Kanayama, Takeshi Okano | 1989-09-12 |
| 4756792 | Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film | Masaaki Kanayama | 1988-07-12 |
| 4609411 | Liquid-phase epitaxial growth method of a IIIb-Vb group compound | Yasuji Kohashi, Toshio Ishiwatari | 1986-09-02 |
| 4510515 | Epitaxial wafer of compound semiconductor display device | Masaki Kajita, Tomio Nakaya, Shinichi Hasegawa | 1985-04-09 |
| 4378259 | Method for producing mixed crystal wafer using special temperature control for preliminary gradient and constant layer deposition suitable for fabricating light-emitting diode | Shinichi Hasegawa | 1983-03-29 |
| 4252576 | Epitaxial wafer for use in production of light emitting diode | Shinichi Hasegawa | 1981-02-24 |
| 4218270 | Method of fabricating electroluminescent element utilizing multi-stage epitaxial deposition and substrate removal techniques | Shinichi Hasegawa | 1980-08-19 |
| 4216484 | Method of manufacturing electroluminescent compound semiconductor wafer | Shinichi Hasegawa | 1980-08-05 |