Issued Patents All Time
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12159943 | GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD) | Yuji Zhao, Chen-Chi Yang, Xuanqi Huang, Kai Fu | 2024-12-03 |
| 11626483 | Low-leakage regrown GaN p-n junctions for GaN power devices | Yuji Zhao, Kai Fu | 2023-04-11 |
| 11527573 | GaN-based threshold switching device and memory diode | Kai Fu, Yuji Zhao | 2022-12-13 |
| 11495694 | GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD) | Yuji Zhao, Chen-Chi Yang, Xuanqi Huang, Kai Fu | 2022-11-08 |
| 11417529 | Plasma-based edge terminations for gallium nitride power devices | Yuji Zhao, Kai Fu | 2022-08-16 |
| 10964749 | GaN-based threshold switching device and memory diode | Kai Fu, Yuji Zhao | 2021-03-30 |
| 10700218 | High-voltage aluminum nitride (AIN) schottky-barrier diodes | Yuji Zhao | 2020-06-30 |